Nanomaterials @ Interfaces Research Group
Prof. Yuval Golan's Research Group
Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)
The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2O3 at the PbSe/GaAs interface.
| Publication language | English |
| Pages | 939-943 |
| Volume | 40 |
| Issue number | 5 |
| Publication status | Published - 01.05.2008 |
Keywords
Chemical deposition
Composition
GaAs
Interface
Microstructure
PbSe
ASJC Scopus subject areas
General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry
