Nanomaterials @ Interfaces Research Group

Prof. Yuval Golan's Research Group

Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

Tzvi Templeman, Maayan Perez, Ofir Friedman, Ran Eitan Abutbul, Michael Shandalov, Vladimir Ezersky, Oleg Konovalov, Yuval Golan

We report layer-by-layer growth of single crystal PbS films with unprecedented quality using chemical solution deposition, on par with much more sophisticated growth techniques. Ex situ transmission electron microscopy and in-house X-ray diffraction established the monocrystalline nature of the films and the atomically smooth film surface. High brilliance synchrotron X-rays were employed in grazing incidence geometry for in situ monitoring the formation of a gallium sulfide interfacial layer, and for establishing layer-by-layer growth of the subsequent PbS film. Our findings show that by maintaining a large reservoir of free sulfide ions, layer-by-layer growth is maintained by reducing the interfacial surface free energy.

Publication language English
Pages 1538-1544
Volume 3
Issue number 8
Publication status Published - 01.08.2019

ASJC Scopus subject areas

General Materials Science
Materials Chemistry
Access to Document
10.1039/c9qm00155g
Other files and links
Link to publication in Scopus