Yevgeny Rakita

Senior Academic

The pursuit of stability in halide perovskites

The monovalent cation and the key for surface and bulk self-healing

D. R. Ceratti, A. V. Cohen, R. Tenne, Y. Rakita, L. Snarski, N. P. Jasti, L. Cremonesi, R. Cohen, M. Weitman, I. Rosenhek-Goldian, I. Kaplan-Ashiri, T. Bendikov, V. Kalchenko, M. Elbaum, M. A.C. Potenza, L. Kronik, G. Hodes, D. Cahen

We find significant differences between degradation and healing at the surface or in the bulk for each of the different APbBr3 single crystals (A = CH3NH3+, methylammonium (MA); HC(NH2)2+, formamidinium (FA); and cesium, Cs+). Using 1- and 2-photon microscopy and photobleaching we conclude that kinetics dominate the surface and thermodynamics the bulk stability. Fluorescence-lifetime imaging microscopy, as well as results from several other methods, relate the (damaged) state of the halide perovskite (HaP) after photobleaching to its modified optical and electronic properties. The A cation type strongly influences both the kinetics and the thermodynamics of recovery and degradation: FA heals best the bulk material with faster self-healing; Cs+ protects the surface best, being the least volatile of the A cations and possibly through O-passivation; MA passivates defects via methylamine from photo-dissociation, which binds to Pb2+. DFT simulations provide insight into the passivating role of MA, and also indicate the importance of the Br3- defect as well as predicts its stability. The occurrence and rate of self-healing are suggested to explain the low effective defect density in the HaPs and through this, their excellent performance. These results rationalize the use of mixed A-cation materials for optimizing both solar cell stability and overall performance of HaP-based devices, and provide a basis for designing new HaP variants.

Publication language English
Pages 1570-1586
Volume 8
Issue number 5
Publication status Published - 01.05.2021

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Process Chemistry and Technology
Electrical and Electronic Engineering
Access to Document
10.1039/d1mh00006c
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Link to publication in Scopus