Alberto Bilenca
Senior Academic
Optoelectronic generation and modulation of millimeter waves in a single InP-GaInAs photo heterojunction bipolar transistor
We demonstrate the use of an InP-GaInAs photo heterojunction bipolar transistor as a millimeter wave transducer. A 45-GHz carrier signal is generated by mixing two optical signals impinging on the optical port at the base. Simultaneously, the base electrode is fed by an electrical signal which modulates the 45 GHz carrier. Analog modulation capabilities were characterized in terms of the modulation depth and linearity while digital modulation was evaluated by a measurement of bit error rates.
| Publication language | English |
| Pages | 1240-1242 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 12 |
| Issue number | 9 |
| Publication status | Published - 01.09.2000 |
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
