Alberto Bilenca

Senior Academic

Optoelectronic mixing, modulation, and injection locking in millimeter-wave self-oscillating InP/InGaAs heterojunction bipolar photo transistors - Single and dual transistor configurations

J. Lasri, A. Bilenca, G. Eisenstein, D. Ritter

We describe an experimental investigation of two millimeter-wave oscillators one employing a single and the other using two InGaAs/InP heterojunction bipolar photo-transistors (photo-HBTs). The single HBT oscillator can be optically injection locked to improve its spectral purity. Alternatively, it can be modulated by analog or digital data carried by an optical signal. In the two phototransistors case, one HBT oscillates and is optically injection locked while the second serves as a modulator. The two-transistor case proved to be superior in terms of carrier spectral purity, analog modulation efficiency and linearity as well as for digital modulation. Its advantages stem from the better isolation between the local oscillator and modulating signals and from the ability to separate the injection-locking and modulation functions.

Publication language English
Pages 1934-1939
Journal IEEE Transactions on Microwave Theory and Techniques
Volume 49
Issue number 10 II
Publication status Published - 01.10.2001

Keywords

Heterojunction bipolar transistor
Injection-locked oscillator
Modulation
Optoelectronic mixing
Self-oscillator

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering
Access to Document
10.1109/22.954810
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