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Applied Nanophotonics, Liquid Crystals and Biomedical Optics

Prof. Ibrahim Abdulhalim Research Group

Comparison of strain in glow discharge a-Si:F and a-Si:H

R. Weil, I. Abdulhalim, R. Beserman, M. Janai, B. Pratt

Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

Publication language English
Pages 261-264
Volume 77-78
Issue number PART 1
Publication status Published - 02.12.1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry