Artificial Photosynthesis Lab

Edri Lab @ Department of Chemical Engineering, BGU

Band alignment in partial and complete ZnO/ZnS/CdS/CuSCN extremely thin absorber cells

An X-ray photoelectron spectroscopy study

Eran Edri, Hagai Cohen, Gary Hodes

In all solar cells, and especially in extremely thin absorber (ETA) solar cells, proper energy band alignment is crucial for efficient photovoltaic conversion. However, available tabulated data usually do not agree with actual results, and in most cases, Voc values lower than expected are achieved. In fact, ETA cells suffer from a very low Voc/E gap ratio, such as in ZnO/CdS/CuSCN cells. Here, we investigate limiting factors of ZnO/CdS/CuSCN ETA cells, applying X-ray photoelectron spectroscopy (XPS), chemically resolved electrical measurement (CREM), Kelvin probe, and I-V characterization. We show that electric fields are gradually developed in the cell upon increased absorber thickness. Moreover, an accumulation layer, unfavorable for the solar cell function, has been revealed at the oxide-absorber interface An effective chemical treatment to prevent formation of this accumulation layer is demonstrated.

Publication language English
Pages 5156-5164
Journal ACS applied materials & interfaces
Volume 5
Issue number 11
Publication status Published - 12.06.2013

Keywords

band diagram
CREM
ETA cells
LiSCN
semiconductor-sensitized
V limit

ASJC Scopus subject areas

General Materials Science

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy
Access to Document
10.1021/am401010f
Other files and links
Link to publication in Scopus