Prof.
Daniel H. Rich
Department of Physics and
The Ilse Katz Institute for Nanoscale Science and
Technology
Ben-Gurion University of the Negev
Biographical
Details:
Professor of Physics, Department of Physics, Ben-Gurion University, Beer-Sheva, Israel (2013 - present)
Associate Professor of Physics, Department of Physics, Ben-Gurion University, Beer-Sheva, Israel (2000 - 2013)
Adjunct Associate Professor of Materials Science and
Engineering, University of Southern California, Los Angeles, CA (2003 - 2005)
Associate Professor of Materials Science and Engineering, University of
Southern California, Los Angeles, CA (1997 - 2003)
Assistant Professor of Materials Science and Engineering,
University of Southern California, Los Angeles, CA (1991 - 1997)
Jet Propulsion Laboratory, Caltech, Pasadena, CA, Post-doctoral fellow
(1989 - 1991)
University of Illinois at Urbana-Champaign, M.Sc. (1985) and Ph.D. (1989),
Physics
Rensselaer Polytechnic Institute, Troy, NY, B.Sc. (1984), Physics, Summa Cum Laude
Mailing Address:
Prof. Dan Rich
Department of Physics
Ben-Gurion University of the Negev
P.O.B. 653
Beer-Sheva 84105, Israel
Email: danrich@bgu.ac.il
Phone: +972-8-6461648
Fax: +972-8-6472904
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Teaching Experience (main courses):
Classical and Modern Optics
Physics I (Mechanics)
Physics II (Electricity and Magnetism)
Physics III (Modern Physics, Quantum Physics,
Solid State)
Solid-State Physics I
Solid-State Physics II
Thermodynamics and Statistical Mechanics I
Thermodynamics and Statistical Mechanics II
Research Interests:
Studies of the optical and structural properties of Quantum Nanostructures,
III-V semiconductor thin films, quantum wells, quantum dots, II-VI core/shell
nanocrystals, phase separation in semiconductors, time-resolved optical spectroscopy,
cathodoluminescence (CL) imaging and spectroscopy,
scanning electron microscopy, near field scanning optical microscopy, and
atomic force microscopy. The optical properties of vertically stacked GaN/AlN self-assembled quantum
dots (SAQDs), InAs/GaAs SAQDs, and InGaN/GaN quantum wells (QWs) are
currently being studied with time-resolved CL spectroscopy and imaging.
Objectives:
We employ novel spatially, spectrally, and temporally resolved electron beam
probes and near field scanning optical microscopy to study the optical
properties of semiconductor quantum heterostructures
and nanostructures (i.e., quantum wires and quantum dots). Our current
laboratory includes a low temperature cathodoluminescence
(CL) system with time-resolved and polarized detection capability mounted on a
state-of-the-art scanning electron microscope (SEM). Our current and past
research topics include the following studies:
1. The optical properties of MBE- and MOCVD-grown III-V (arsenides, nitrides, and phosphides), II-VI (sulfides, selenides and tellurides) quantum dot nanostructures, laterally patterned thin-films, heterostructures, and multiple quantum well (MQW) systems
2. The influence of structural morphology and defects on the carrier recombination processes of quantum heterostructures and nanostructures
3. The phenomena of electron-hole plasmas in modulation nipi-doped MQWs, including nonlinear optical properties and transport dynamics
4. The effect of local strain variations in heterostructures and nanostructures induced by lattice and thermal mismatch on the optical properties
5. The carrier relaxation and collection dynamics in III-V, II-VI quantum wires, quantum dots, core/shell nanocrystals, and semiconductor nanostructure alloys exhibiting phase separation and compositional modulation
6. Analysis of strain relaxation and defect generation in high electron mobility transistors and heterojunction phototransistors
7. Modeling of the excitation and polarization dependence of quantum well, wire and dot optical transitions with various k×p and effective mass calculations of the eigenstates to better understand the influence of strain and structure on the optical properties
8. Optical properties and carrier relaxation dynamics of semi-polar GaN/AlGaN nanostructures
9. The coupling of excitons to surface plasmon polaritons (SPPs) for thin metal films on GaAs/AlAs core-shell nanowires, InxGa1−xN/GaN Quantum Wells, and Si Nanocrystals.
The emphasis in this work is on studying simultaneously sub-micron scale spatial and sub-nanosecond scale temporal variations in the optical properties so that an understanding of the interrelationship between the microstructure and the carrier relaxation dynamics can be established.
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Publications: Citations on Google Scholar
115. Y. Estrin, D. H. Rich, N. Rozenfeld, N. Arad-Vosk, A. Ron, and A. Sa’ar, Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al, Nanotechnology 26, 435701 (2015). pdf, Link
114. Y. Estrin, D. H. Rich, S. Keller, and S. P. DenBaars, Observations of Exciton-Surface Plasmon Polariton Coupling and Exciton-Phonon Coupling in InGaN/GaN Quantum Wells Covered with Au, Ag, and Al Films, J. Phys.: Condens. Matter 27, 265802 (2015). pdf, Link
113. Y. Estrin, D. H. Rich, S. Keller, and S. P. DenBaars, Temperature Dependence of Exciton-Surface Plasmon Polariton Coupling in Ag, Au, and Al Films on InxGa1−xN/GaN Quantum Wells Studied with Time-Resolved Cathodoluminescence, J. Appl. Phys. 117, 043105 (2015). pdf, Link
112. Y. Estrin, D. H. Rich, A. V. Kretinin, and H. Shtrikman, Influence of Metal Deposition on Exciton-Surface Plasmon Polariton Coupling in GaAs/AlAs/GaAs Core-Shell Nanowires Studied with Time-Resolved Cathodoluminescence, Nano Lett. 13 (4), pp. 1602–1610 (2013). pdf, Link
111. D. Alima, Y. Estrin, D. H. Rich, and I. Bar, The Structural and Optical Properties of Supercontinuum Emitting Si Nanocrystals Prepared by Laser Ablation in Water, J. Appl. Phys. 112, 114312 (2012). pdf, Link
110. J. S. Penczak, Jr., Y. Liu, R. D. Schaller, D. H. Rich, and R. J. Gordon, The Mechanism for Continuum Polarization in Laser Induced Breakdown Spectroscopy of Si(111), Spectrochimica Acta B, Vol. 74-75, pp. 3-10 (2012). pdf, Link
109. Z. Hu, S. Singha, D. H. Rich, and R. J. Gordon, Optical generation of polarized photoluminescence from GaAs(100), Appl. Phys. Lett. 100, 141102 (2012). pdf, Link
108. D. H. Rich, O. Moshe, B. Damilano and J. Massies, Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111), Proceedings of the Spring Meeting of the European Materials Research Society (Symposium F: Group III nitrides and their heterostructures for electronics and photonics) May 2011, published in Physica Status Solidi (c),Vol. 9, No. 3-4, pp. 1011-1015 (2012). pdf, Link
107. O. Moshe, D. H. Rich, B. Damilano, and J. Massies, Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111), J. Phys. D: Appl. Phys. 44, 505101 (2011). pdf, Link
106. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111), Appl. Phys. Lett. 98, 061903 (2011). pdf, Link
105. D. H. Rich, O. Moshe, B. Damilano and J. Massies, Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses, 30th International Conference on the Physics of Semiconductors, AIP Conf. Proc. 1399, 453 (2011). pdf, Link
104. D. H. Rich,
Y. Estrin, O. Moshe, S. Bhattacharyya and A. Gedanken,
Optical and structural studies of phase-separation in ZnxCd1-xSe/C
Core/shell nanocrystals, 30th International
Conference on the Physics of Semiconductors, AIP Conf. Proc. 1399, 219
(2011). pdf, Link
103. S. Bhattacharyya, Y. Estrin, D. H. Rich, D. Zitoun, Y. Koltypin, and A. Gedanken, Luminescent and Ferromagnetic CdS:Mn2+ / C Core-shell Nanocrystals, J. Phys. Chem. C 114, 22002 (2010). pdf, Link
102. O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, and J. Massies, Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation, J. Appl. Phys. 108, 083510 (2010). pdf, Link
101. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses, J. Vac. Sci. Technol. B 28 (4), C5E25 (2010). pdf, Link
100. Y. Estrin, D. H. Rich, O. Moshe, S. Bhattacharyya, and A. Gedanken, Phase-separation in ZnxCd1-xSe/C core/shell nanocrystals studied with cathodoluminescence spectroscopy, published in Photovoltaics and Optoelectronics from Nanoparticles, edited by M. Winterer, W. L. Gladfelter, D. R. Gamelin, and S. Oda (Mater. Res. Soc. Symp. Proc. Volume 1260, Warrendale, PA, 2010), Paper No. 1260-T10-03. pdf, Link
99. Y. Estrin,
D. H. Rich, O. Moshe,
98. S. Bhattacharyya, Y. Estrin, O. Moshe, D. H. Rich, L. A. Solovyov, and A. Gedanken, Highly luminescent ZnxCd1-xSe/C core/shell nanocrystals: Large scale synthesis, structural and cathodoluminescence studies, ACS Nano 3 (7), 1864 (2009). pdf, Link
97. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Perturbing GaN/AlN quantum dots with uniaxial stressors, Proceedings of the 35th International Symposium on Compound Semiconductors (ISCS) in Europa-Park, Rust, Germany, published in Physica Status Solidi (c) Vol. 6, No. 6, pp. 1432-1435, (2009). pdf, Link
96. S. Bhattacharyya, D. Zitoun, Y. Estrin, O. Moshe, D. H. Rich, and A. Gedanken, A one-step, template-free synthesis, characterization, optical and magnetic properties of Zn1-xMnxTe nanosheets, Chem. Mater. 21, 326 (2009). pdf, Link
95. S. Khatsevich and D. H. Rich, The effects of crystallographic orientation and strain on the properties
of excitonic emission from wurtzite
InGaN/GaN quantum
wells, J. Phys.: Condens. Matter 20, 215223 (2008). pdf, Link
94. O. Moshe, D.
H. Rich, B. Damilano and J. Massies,
Effect of uniaxial stress on the polarization of light emitted
from GaN/AlN
quantum dots grown on Si(111), Phys. Rev. B 77, 155322 (2008). pdf, Link
93. H. P. D. Schenk, S. I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich and D. H. Rich, Band-gap narrowing and radiative efficiency of silicon doped GaN, J. Appl. Phys. 103, 103502 (2008). pdf, Link
92. S. Bhattacharyya, I. Perelshtein, O. Moshe, D. H. Rich, and A. Gedanken, One-step solvent-free synthesis and characterization of Zn1-xMnxSe/C nanorods and nanowires, Adv. Funct. Mater. 18, 1641 (2008). pdf, Link
91. S. Khatsevich, D. H. Rich, X. Zhang, and P. D. Dapkus, Correlating exciton
localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN
planar surfaces and facets of GaN triangular prisms,
J. Appl. Phys. 102, 093502 (2007). pdf, Link
90. S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars, Carrier
relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum
wells, J. Appl. Phys. 101, 093515 (2007). pdf,
Link
89. G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. Damilano, Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111), Phys. Rev. B 75, 075306 (2007). pdf, Link
88. S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars, Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InGaN/GaN multiple and single quantum wells, Phys. Rev. B 75, 035324 (2007). pdf, Link
87. G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, J. Salzman, B. Meyler, M. Shandalov and Y. Golan, Cathodoluminescence Study of Micro-crack-induced Stress Relief for AlN Films on Si(111), J. Electron. Mater. 35 (12), L15 (2006). pdf, Link
86. S. Khatsevich, D. H. Rich, E.-T. Kim, and A. Madhukar, Cathodoluminescence
imaging and spectroscopy of excited states in InAs
self-assembled quantum dots, J. Appl. Phys. 97, 123520 (2005). pdf,
Link
85. S. Khatsevich, D. H. Rich, X. Zhang, W. Zhou, and P. D. Dapkus, Temperature dependence of excitonic
recombination in lateral epitaxially overgrown InGaN/GaN quantum wells
studied with cathodoluminescence, J. Appl.
Phys. 95, 1832 (2004). pdf, Link
84. M. Gerling, A. Gustafsson, D. H.
Rich, D. Ritter, and D. Gershoni, Roughening
transition and solid-state diffusion in short period InP/In0.53Ga
0.47As superlattices, Appl.
Phys. Lett.78, 1370 (2001). pdf, Link
83. X. Zhang, P. D. Dapkus, and D. H. Rich, Lateral epitaxy overgrowth of
GaN with NH3 flow rate
modulation, Appl. Phys. Lett. 77, 1496 (2000). pdf, Link
82. X. Zhang, R. R. Li, P.
D. Dapkus, and D. H. Rich, Direct lateral
overgrowth of GaN on sapphire substrates based
on a sparse GaN nucleation technique,
Appl. Phys. Lett. 77, 2213 (2000). pdf, Link
81. D. H. Rich, C. Zhang,
I. Mukhametzhanov, and A. Madhukar,
Cathodoluminescence wavelength imaging
study of clustering in InAs/GaAs
self-assembled quantum dots, Mater. Res. Soc. Proc. Vol. 618,
173 (2000). pdf,
Link
80. D. H. Rich, C. Zhang,
I. Mukhametzhanov, and A. Madhukar,
Cathodoluminescence wavelength
imaging of micron-scale energy variations in InAs/GaAs
self-assembled quantum dots, Appl. Phys. Lett. 76, 3597 (2000). pdf,
Link
79. X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim, J. T. Kobayashi, and N. P.
Kobayashi, InGaN/GaN
Quantum Wells Growth on Pyramids of Epitaxial Lateral Overgrown GaN, J. of Electron. Mater. 29, No. 1, pp. 10-14
(2000). pdf, Link
78. N. P. Kobayashi, J. T.
Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Epitaxial
lateral overgrowth of GaN over AlOx surface formed on Si substrate,
Appl. Phys. Lett. 74, 2836 (1999). pdf, Link
77. D. H. Rich, Y. Tang, A.
Konkar, P. Chen, and A. Madhukar,
Polarized and time-resolved cathodoluminescence
study of selectively grown novel self-assembled InAs/GaAs
quantum dots, International conference on the physics of semiconductors
proc. 24, August, 1998. pdf
76. D. H. Rich, X. Zhang,
J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Exciton localization in InGaN/GaN quantum heterostructures studied with time-resolved cathodoluminescence, International conference on
the physics of semiconductors proc. 24, August, 1998. pdf
75. J. T. Kobayashi, N. P.
Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Structural
and optical emission characteristics of InGaN
thin layers and the implications for growing high-quality quantum wells by
MOCVD, J. Cryst. Growth 195, 252
(1998). pdf
74. D. H. Rich, Y. Tang, A.
Konkar, P. Chen, and A. Madhukar,
Polarized cathodoluminescence study of
selectively grown self-assembled InAs/GaAs
quantum dots, J. Appl. Phys. 84, 6337 (1998). pdf
73. X. Zhang, D. H. Rich,
J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Carrier
relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence, Appl. Phys. Lett. 73,
1430 (1998). pdf
72. Y. Tang, D. H. Rich, I.
Mukhametzhanov, P. Chen, and A. Madhukar,
Self-assembled InAs/GaAs quantum dots
studied with excitation dependent cathodoluminescence,
J. Appl. Phys. 84, 3342 (1998). pdf
71. X. Zhang, D. H. Rich,
J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Carrier
relaxation and recombination in InGaN/GaN quantum heterostructures
probed with time-resolved cathodoluminescence,
Mater. Res. Soc. Proc. 512, 193 (1998). pdf
70. N. P. Kobayashi, J. T.
Kobayashi, W. J. Choi, P. D. Dapkus, X. Zhang, and D.
H. Rich, Growth of single-crystal GaN on
a Si substrate using oxidized AlAs as
an intermediate layer, J. Cryst. Growth 189,
172 (1998). pdf
69. Y. Tang, D. H. Rich, A.
M. Moy and K. Y. Cheng, An Optical Method for Studying Carrier Diffusion
in Strained (InP)2/(GaP)2 Quantum Wires, Appl.
Phys. Lett. 72, 55 (1998). pdf
68. X. Zhang, D. H. Rich, C.
K. Lin, and P. D. Dapkus, Cathodoluminescence
study of disordering of GaAs/AlGaAs quantum
wells using an AlAs native oxide and thermal
annealing technique, J. Appl. Phys. 84, 1095 (1998). pdf
67. J. T. Kobayashi, N. P. Kobayashi,
P. D. Dapkus, X. Zhang, and D. H. Rich, Initial
stages of MOCVD growth of GaN using a
multi-step growth approach, Mater. Res. Soc. Symp.
Proc. 468, 187 (1997). pdf
66. N. P. Kobayashi, J. T.
Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X.
Zhang, and D. H. Rich, GaN growth on Si(111)
substrates using oxidized AlAs as an
intermediate layer, Appl. Phys. Lett. 71, 3569 (1997). pdf
65. C. K. Lin, X. Zhang, P.
D. Dapkus, and D. H. Rich, Spatially selective
disordering of InGaAs/GaAs quantum wells using
an AlAs native oxide and thermal annealing
technique, Appl. Phys. Lett. 71, 3108 (1997). pdf
64. Y. Tang, D. H. Rich, A.
M. Moy and K. Y. Cheng, Spatial variations in luminescence and carrier
relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 Quantum Wires, J. Vac. Sci.
Technol. B15, 1034 (1997). pdf
63. O. Sjölund,
H. T. Lin, D. H. Rich, M. Ghisoni, A. Larsson, S.
Wang, J. Thordsson, and T. G. Andersson,
Cathodoluminescence and electron
beam induced current study of partially relaxed AlGaAs/GaAs/InGaAs heterojunction phototransistors under operating
conditions, J. Appl. Phys. 82, 1438 (1997). pdf
62. D. H. Rich, Y. Tang,
and H. T. Lin, Linearly polarized and time-resolved cathodoluminescence
study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires, J. Appl.
Phys. 81, 6837 (1997). pdf
61. H. T. Lin, D. H. Rich,
A. Konkar, P. Chen, and A. Madhukar,
Carrier relaxation and recombination in GaAs/AlGaAs
quantum heterostructures and nanostructures probed
with time-resolved cathodoluminescence, J.
Appl. Phys. 81, 3186 (1997). pdf
60. K. Rammohan,
D. H. Rich, M. H. MacDougal, and P. D. Dapkus, Thermal
processing of strained InGaAs/GaAs quantum
well heterostructures bonded to Si via an
epitaxial lift-off technique, Appl. Phys. Lett. 70, 1599 (1997).
pdf
59. D. H. Rich, H. T. Lin,
A. Konkar, P. Chen, and A. Madhukar,
Cathodoluminescence study of band
filling and carrier thermalization in GaAs/AlGaAs quantum boxes, J. Appl. Phys. 81,
1781 (1997). pdf
58. A. Konkar,
H. T. Lin, D. H. Rich, P. Chen, and A. Madhukar, Growth
controlled fabrication and cathodoluminescence study
of 3D confined GaAs volumes on non-planar patterned GaAs(001)
substrates, J. Cryst. Growth 175, 741
(1997). pdf
57. D. H. Rich and Y. Tang,
Time-resolved cathodoluminescence study of
carrier relaxation in strained (InP)2/(GaP)2 quantum wires, Appl.
Phys. Lett. 69, 3716 (1996). pdf
56. P. Chen, A. Konkar, H. T. Lin, D. H. Rich, and A. Madhukar,
Lattice-matched and mismatched quantum boxes fabricated via size-reducing
growth on nonplanar patterned substrates, Int. Conf. Phys. Sem.
Proc. 23, July 1996. pdf
55. H. T. Lin, D. H. Rich,
O. Sjölund, M. Ghisoni, and
A. Larsson, Cathodoluminescence study of
the influence of misfit dislocations on hole accumulation in a n-AlGaAs/p-GaAs/n-InGaAs
heterojunction phototransistor, Appl. Phys. Lett. 69, 1602
(1996). pdf
54. D. H. Rich, H.T. Lin,
A. Konkar, P. Chen, and A. Madhukar,
Time-resolved cathodoluminescence study of
carrier relaxation in GaAs/AlGaAs layers grown
on a patterned GaAs(001) substrate, Appl. Phys. Lett. 69,
665 (1996). pdf
53. D. H. Rich, K. Rammohan, H. T. Lin, Y. Tang, M. Meshkinpour,
and M.S. Goorsky, Effect of interface defect
formation on carrier diffusion and luminescence in In0.2Ga 0.8As/AlxGa1-xAs
quantum wells, J. Vac. Sci. Technol. B14, 2922 (1996). pdf
52. Y. Tang, H. T. Lin, D.
H. Rich, P. Colter, and S. M. Vernon, Nonlinear optical effects in
strained-induced laterally ordered (InP)2/(GaP)2 quantum wires, Phys. Rev. B53,
R10501 (1996). pdf
51. H. T. Lin, D. H. Rich,
and A. Larsson, Excess carrier lifetime and ambipolar
diffusion anisotropy in a nipi-doped In0.2Ga0.8As/GaAs
multiple quantum well structure, J. Appl. Phys. 79, 7014
(1996). pdf
50. H. T. Lin, D. H. Rich,
and A. Larsson, Influence of Structural Defects on Carrier Recombination
and Current Gain in an InGaAs/AlGaAs/GaAs
Heterojunction Phototransistor, J. Appl. Phys. 79, 8015 (1996). pdf
49. D. H. Rich, H. T. Lin, Y. Tang, K. Rammohan, and A. Larsson, Optical Studies of InGaAs/GaAs MQWs and GaAs/Si Using Novel
SEM-Based Techniques, Scanning Microscopy Supplement 9, pp. 131-155
(1995). pdf
48. K. Rammohan, H. T.
Lin, D. H. Rich, and A. Larsson, Influence
of Misfit Dislocations on Thermal Quenching of Luminescence in InGaAs/GaAs Multiple Quantum Wells, J. Appl. Phys. 78, 6687 (1995). pdf
47. H. T. Lin, D. H. Rich, and A. Larsson, Effects of Strain-induced Defects on Excess
Carrier Lifetime and Ambipolar Diffusion in nipi-Doped InGaAs/GaAs MQWs, Mater. Res. Soc. Proc. Vol.
379, 275 (1995). pdf
46. Y. Tang, K. Rammohan,
H. T. Lin, D. H. Rich, P. Colter, and S. M. Vernon, Polarized Cathodoluminescence Study of (InP)2/(GaP)2
Bilayer Superlattice Structures, Mater. Res.
Soc. Proc. Vol. 379, 165 (1995). pdf
45. K. Rammohan, D. H.
Rich, and A. Larsson, Temperature
Dependence of Cathodoluminescence from InGaAs/GaAs Multiple Quantum Wells, Mater. Res. Soc. Proc. Vol. 379, 115
(1995). pdf
44. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, R. S. Goldman, H. H. Wieder, and
K. L. Kavanagh, Influence of GaAs(001) Substrate Misorientation Towards {111} on the Optical Properties of InGaAs/GaAs, J. Vac. Sci. Technol. B13, 1766 (1995). pdf
43. A. Konkar, K. C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H. T. Lin, and D. H. Rich, In-situ fabrication of three-dimensionally
confined GaAs and InAs volumes via growth on
non-planar patterned GaAs(001) substrates, J. Cryst.
Growth 150, 311 (1995). pdf
42. Q. Xie, A. Konkar, A. Kalburge, T. R.
Ramachandran, P. Chen, R. Cartland, A. Madhukar, H.
T. Lin, and D. H. Rich, Structural and
optical behavior of strained InAs quantum boxes grown
on planar and patterned GaAs(100) substrates by molecular beam epitaxy,
J. Vac. Sci. Technol. B13, 642
(1995). pdf
41. D. H. Rich, H. T. Lin, and A. Larsson, Influence of defects on electron-hole plasma
recombination and transport in a nipi-doped InGaAs/GaAs multiple quantum well structure, J. Appl. Phys. 77, 6557 (1995). pdf
40. K. Rammohan, Y.
Tang, D. H. Rich, R. S. Goldman, H. H. Wieder, and K.
L. Kavanagh, Relaxation-induced
polarized luminescence from InxGa1-xAs films grown on GaAs(001), Phys. Rev. B51,
5033 (1995). pdf
39. K. Rammohan, D. H.
Rich, R. S. Goldman, J. Chen, H. H. Wieder, and K. L.
Kavanagh, Study of micron-scale spatial variations in strain of a
compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure, Appl. Phys. Lett. 66, 869 (1995). pdf
38. H. Zhao, K. Uppal, H. Mac Dougal, P. D. Dapkus, H. T. Lin, and
D. H. Rich, Growth and doping
properties of AlGaAs/GaAs/InGaAs structures on nonplanar substrates for
applications to low threshold lasers, J. Crys.
Growth 145, 824 (1994). pdf
37. R.S. Goldman, H. H. Wieder,
K. L. Kavanagh, K. Rammohan, and D. H. Rich, Anisotropic structural, electronic, and
optical properties of InGaAs grown by
molecular beam epitaxy on misoriented substrates,
Appl. Phys. Lett. 65, 1424 (1994). pdf
36. M. Meshkinpour, M.
S. Goorsky, D. C. Streit,
T. Block, M. Wojtowicz, K. Rammohan,
and D. H. Rich, The Relationship
Between InGaAs Channel Layer Thickness and Device
Performance in High Electron Mobility Transistors, Mater. Res. Soc.
Proc. 340, 327 (1994). pdf
35. Y. Tang, D. H. Rich, E. H. Lingunis, and N. M. Haegel, Polarized Cathodoluminescence
Study of Stress for GaAs Grown Selectively on Patterned Si(100), J. Appl. Phys. 76,
3032 (1994). pdf
34. K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L.
Chen, K. Rammohan, and D. H. Rich, Realization of Three-Dimensionally Confined
Structures Via One-Step In Situ MBE On Appropriately Patterned GaAs(111)B and GaAs(001),
J. Vac. Sci. Technol. B12, 1071
(1994). pdf
33. R. S. Goldman, K. Rammohan,
A. Raisanen, M. Goorsky,
L.J. Brillson, D. H. Rich, H. H. Wieder, and K. L.
Kavanagh, Anisotropic Structural and
Electronic Properties of InGaAs/GaAs Heterojunctions, Mater. Res. Soc. Symp. Proc. 340,
349 (1994). Link
32. H. T. Lin, D. H. Rich, and D. B. Wittry, Cathodoluminescence Study of Domains, Defects, and Interdiffusion
in ZnSe/GaAs(100), J. Appl. Phys. 75, 8080 (1994). pdf
31. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain, Ambipolar Diffusion Anisotropy Induced by Defects in nipi-doped In0.2Ga0.8As/GaAs Multiple Quantum Wells, Appl. Phys.
Lett. 64, 730 (1994). pdf
30. A. Larsson, B. Jonsson,
O. Sjolund, J. G. Cody, T.G. Andersson, S. Wang, U. Sodervall, D. H. Rich, J. Maserjian,
Carrier Lifetimes in Periodically d-doped MQW Structures,
Proc. SPIE 1985, 478 (1993). pdf
29. K. C. Rajkumar, A. Madhukar, K. Rammohan, D. H.
Rich, P. Chen, and L. Chen, Optically
Active Three-Dimensionally Confined Structures Realized Via Molecular Beam Epitaxical Growth on Non-Planar GaAs(111)B, Appl. Phys. Lett. 63, 2905 (1993). pdf
28. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, S. I. Borenstain, Absorption Modulation Induced by Electron
Beam Excitation of Strained In0.2Ga0.8As/GaAs Multiple Quantum Wells, J. Vac.
Sci. Technol. B 11, 1717 (1993). pdf
27. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain, Electron Beam-Induced Absorption Modulation
Imaging of Strained In0.2Ga0.8As/GaAs Multiple Quantum Wells, Appl. Phys.
Lett. 63, 394 (1993). pdf
26. K. C. Rajkumar, K. Kaviani, P. Chen, A. Madhukar, K.
Rammohan, and D. H. Rich, One-step In-situ Quantum Dots Via Molecular Beam Epitaxy, J. Cryst. Growth 127,
863 (1993). pdf
25. D. H. Rich, A. Ksendzov,
R. W. Terhune, F. J. Grunthaner,
and B. A. Wilson, Polarized Cathodoluminescence Study of Stress in GaAs/Si, NASA Tech. Brief. 17(4), 53 (1992).
24. Y. H. Shing, F. S.
Pool, and D. H. Rich, Low-pressure
microwave plasma nucleation and deposition of diamond films, Thin Solid
Films 212, 150 (1992). pdf
23. K. C. Rajkumar, K. Kaviani, P. Chen, A. Madhukar,
and D. H. Rich, In-situ Growth of
Three-dimensionally Confined Structures on Patterned GaAs(111)B Substrates, Mater. Res. Soc. Symp.
Proc. 263, 163 (1992). pdf
22. D. H. Rich, T. George, J. Maserjian,
F. J. Grunthaner, A. Larsson, Cathodoluminescence and Transmission Electron Microscopy Study
of Dark Line Defects in Thick In0.2Ga0.8As/GaAs Multiple Quantum Wells, J. Appl.
Phys. 72, 5834 (1992). pdf
21. D. H. Rich, K. C. Rajkumar,
L. Chen, A. Madhukar, T. George, J. Maserjian, F. J. Grunthaner, and
A. Larsson, Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near-infrared cathodoluminescence
study, J. Vac. Sci. Technol. B10,
1965 (1992). pdf
20. D. H. Rich, K. C. Rajkumar,
L. Chen, A. Madhukar, and F. J. Grunthaner,
Near-infrared Cathodoluminescence
Imaging of Defect Distributions in In0.2Ga0.8As/GaAs Multiple Quantum Wells Grown on Prepatterned GaAs, Appl. Phys. Lett. 61, 222 (1992). pdf
19. Y. H. Shing, D. H.
Rich, and F. S. Pool, Dependence of
the cathodoluminescence of diamond films on
deposition temperature, J. Appl. Phys. 71, 6036 (1992). pdf
18. G.
17. Y. H. Shing, F. S. Pool and D. H. Rich, Diamond Film
Deposition Using Microwave Plasmas Under Low Pressures in Proc. 1st
Int. Conf. on the Applications of Diamond Films and Related Materials, Eds. Y. Tzeng, M. Yoshikawa, M. Murakawa,
and A. Feldman, Auburn, AL, August 1991, Elsevier, Amsterdam, pp. 497-502
(1991).
15. S. I. Borenstain, I. Grave, A. Larsson, D. H.
Rich, B. Jonsson, I. Andersson,
J. Westin, and T. Andersson, Long-wavelength infrared spectroscopy of an asymmetrically structured Ga0.6Al0.4As/GaAs superlattice,
Phys. Rev. B43, 9320 (1991). pdf
13. D. H. Rich, A. Ksendzov,
R. W. Terhune, F. J. Grunthaner,
B. A. Wilson, H. Shen, M. Dutta, S. M. Vernon, and T. M. Dixon, Polarized-cathodoluminescence
study of uniaxial and biaxial stress in GaAs/Si, Phys. Rev. B43,
6836 (1991). pdf
11. D. H. Rich, T. Miller, and T.-C. Chiang, Electronic and chemical properties of In
and Sb adsorbed on Ge(100) studied by synchrotron photoemission,
Phys. Rev. B41, 3004 (1990). pdf
10. D. H. Rich, A. Samsavar,
T. Miller, and T.-C. Chiang, Adsorbate-to-Si(100) bonding coordination numbers and structural determinations from
synchrotron photoemission studies, Physica Scripta 41, 83
(1990). pdf
9. D. H. Rich, G. E. Franklin, F. M. Leibsle, T.
Miller, and T.-C. Chiang, Synchrotron
photoemission studies of the Sb-passivated Si surfaces: Degenerate
doping and bulk band dispersions, Phys. Rev. B40, 11804 (1989). pdf
8. D. H. Rich, A. Samsavar,
T. Miller, F. M. Leibsle, and T.-C. Chiang, Degenerate doping and conduction-band properties of Si studied by
synchrotron photoemission of Sb/Si(001),
Phys. Rev. B40, 3469 (1989). pdf
7. D. H. Rich, F.M. Leibsle, A. Samsavar, E. S. Hirschorn, T.
Miller, and T.-C. Chiang, Adsorption
and interaction of Sb on Si(100) studied by
scanning tunneling microscopy and core-level photoemission, Phys. Rev.
B39, 12758 (1989). pdf
6. D. H. Rich, T. Miller, G. E. Franklin, and
T.-C. Chiang, Sb-induced bulk band
transitions in Si(111) and Si(001) observed in
synchrotron photoemission studies, Phys. Rev. B39, 1438 (1989). pdf
5. D. H. Rich, T. Miller, A. Samsavar,
H.F. Lin, and T.-C. Chiang, Adsorption
and growth of Sn on Si(100) observed in
synchrotron photoemission studies, Phys. Rev. B37, 10221 (1988). pdf
4. D. H. Rich, T. Miller, and T.-C. Chiang, Possibility of charge transfer between
dimer atoms on Si(100)-(2x1),
Phys. Rev. B37, 3124 (1988). pdf
3. D. H. Rich, T. Miller, and T.-C. Chiang, Absolute determination of surface core level
emission for Ge(100)-(2x1) and Ge(111)-c(2x8): surface
reconstruction and defects, Phys. Rev. Lett. 60, 357 (1988). pdf
2. D. H. Rich, A. Samsavar,
T. Miller, H. F. Lin, T.-C. Chiang, J.-E. Sundgren, and
J. E. Greene, Coordination
determination of In on Si(100) from synchrotron
photoemission studies, Phys. Rev. Lett. 58, 579 (1987). pdf
1. D. H. Rich, A. Samsavar,
T. Miller, H. F. Lin, and T.-C. and Chiang, Structural analysis and electronic properties of In on Si(100) from synchrotron photoemission studies,
Mater. Res. Soc. Symp. Proc. 94, 219 (1987). Link