Prof. Daniel H. Rich                                                                                                                     
Department of Physics and
The Ilse Katz Institute for Nanoscale Science and Technology

Ben-Gurion University of the Negev

Biographical Details:

Professor of Physics, Department of Physics, Ben-Gurion University, Beer-Sheva, Israel (2013 - present)

Associate Professor of Physics, Department of Physics, Ben-Gurion University, Beer-Sheva, Israel (2000 - 2013)

Adjunct Associate Professor of Materials Science and Engineering, University of Southern California, Los Angeles, CA (2003 - 2005)
Associate Professor of Materials Science and Engineering, University of Southern California, Los Angeles, CA (1997 - 2003)

Assistant Professor of Materials Science and Engineering, University of Southern California, Los Angeles, CA (1991 - 1997)
Jet Propulsion Laboratory, Caltech, Pasadena, CA, Post-doctoral fellow (1989 - 1991)
University of Illinois at Urbana-Champaign, M.Sc. (1985) and Ph.D. (1989), Physics
Rensselaer Polytechnic Institute, Troy, NY, B.Sc. (1984), Physics, Summa Cum Laude

Mailing Address:
Prof. Dan Rich
Department of Physics
Ben-Gurion University of the Negev
P.O.B. 653
Beer-Sheva 84105, Israel

Email: danrich@bgu.ac.il
Phone: +972-8-6461648
Fax:     +972-8-6472904

-----------------------------------------------------------------------------------------------------------------------------------------

 

Teaching Experience (main courses):

Classical and Modern Optics

Physics I (Mechanics)

Physics II (Electricity and Magnetism)

Solid-State Physics I

Solid-State Physics II

Thermodynamics and Statistical Mechanics I

Thermodynamics and Statistical Mechanics II

Research Interests:
Studies of the optical and structural properties of Quantum Nanostructures, III-V semiconductor thin films, quantum wells, quantum dots, II-VI core/shell nanocrystals, phase separation in semiconductors, time-resolved optical spectroscopy, cathodoluminescence (CL) imaging and spectroscopy, scanning electron microscopy, near field scanning optical microscopy, and atomic force microscopy. The optical properties of vertically stacked GaN/AlN self-assembled quantum dots (SAQDs), InAs/GaAs SAQDs, and InGaN/GaN quantum wells (QWs) are currently being studied with time-resolved CL spectroscopy and imaging.

Objectives:
We employ novel spatially, spectrally, and temporally resolved electron beam probes and near field scanning optical microscopy to study the optical properties of semiconductor quantum heterostructures and nanostructures (i.e., quantum wires and quantum dots). Our current laboratory includes a low temperature cathodoluminescence (CL) system with time-resolved and polarized detection capability mounted on a state-of-the-art scanning electron microscope (SEM). Our current and past research topics include the following studies:

1. The optical properties of MBE- and MOCVD-grown III-V (arsenides, nitrides, and phosphides), II-VI (sulfides, selenides and tellurides) quantum dot nanostructures, laterally patterned thin-films,  heterostructures, and multiple quantum well (MQW) systems

2. The influence of structural morphology and defects on the carrier recombination processes of quantum heterostructures and nanostructures

3. The phenomena of electron-hole plasmas in modulation nipi-doped MQWs, including nonlinear optical properties and transport dynamics

4. The effect of local strain variations in heterostructures and nanostructures induced by lattice and thermal mismatch on the optical properties

5. The carrier relaxation and collection dynamics in III-V, II-VI quantum wires, quantum dots, core/shell nanocrystals, and semiconductor nanostructure alloys exhibiting phase separation and compositional modulation

6.  Analysis of strain relaxation and defect generation in high electron mobility transistors and heterojunction phototransistors

7. Modeling of the excitation and polarization dependence of quantum well, wire and dot optical transitions with various k×p and effective mass calculations of the eigenstates to better understand the influence of strain and structure on the optical properties

8. Optical properties and carrier relaxation dynamics of semi-polar GaN/AlGaN nanostructures

9.  The coupling of excitons to surface plasmon polaritons (SPPs) for thin metal films on GaAs/AlAs core-shell nanowires, InxGa1−xN/GaN Quantum Wells, and Si Nanocrystals.

The emphasis in this work is on studying simultaneously sub-micron scale spatial and sub-nanosecond scale temporal variations in the optical properties so that an understanding of the interrelationship between the microstructure and the carrier relaxation dynamics can be established.

----------------------------------------------------------------------------------------------------------------------------------------
Publications: Citations on Google Scholar

115. Y. Estrin, D. H. Rich, N. Rozenfeld, N. Arad-Vosk, A. Ron, and A. Sa’ar, Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al, Nanotechnology 26, 435701 (2015). pdf, Link

114. Y. Estrin, D. H. Rich, S. Keller, and S. P. DenBaars, Observations of Exciton-Surface Plasmon Polariton Coupling and Exciton-Phonon Coupling in InGaN/GaN Quantum Wells Covered with Au, Ag, and Al Films, J. Phys.: Condens. Matter 27, 265802 (2015). pdf, Link

113. Y. Estrin, D. H. Rich, S. Keller, and S. P. DenBaars, Temperature Dependence of Exciton-Surface Plasmon Polariton Coupling in Ag, Au, and Al Films on InxGa1−xN/GaN Quantum Wells Studied with Time-Resolved Cathodoluminescence, J. Appl. Phys. 117, 043105 (2015). pdf, Link

112. Y. Estrin, D. H. Rich, A. V. Kretinin, and H. Shtrikman, Influence of Metal Deposition on Exciton-Surface Plasmon Polariton Coupling in GaAs/AlAs/GaAs Core-Shell Nanowires Studied with Time-Resolved Cathodoluminescence, Nano Lett. 13 (4), pp. 1602–1610 (2013). pdf, Link

111. D. Alima, Y. Estrin, D. H. Rich, and I. Bar, The Structural and Optical Properties of Supercontinuum Emitting Si Nanocrystals Prepared by Laser Ablation in Water, J. Appl. Phys. 112, 114312 (2012). pdf, Link

110. J. S. Penczak, Jr., Y. Liu, R. D. Schaller, D. H. Rich, and R. J. Gordon, The Mechanism for Continuum Polarization in Laser Induced Breakdown Spectroscopy of Si(111), Spectrochimica Acta B, Vol. 74-75, pp. 3-10 (2012). pdf, Link

109. Z. Hu, S. Singha, D. H. Rich, and R. J. Gordon, Optical generation of polarized photoluminescence from GaAs(100), Appl. Phys. Lett. 100, 141102 (2012). pdf, Link

108. D. H. Rich, O. Moshe, B. Damilano and J. Massies, Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111), Proceedings of the Spring Meeting of the European Materials Research Society (Symposium F: Group III nitrides and their heterostructures for electronics and photonics) May 2011, published in Physica Status Solidi (c),Vol. 9, No. 3-4, pp. 1011-1015 (2012). pdf, Link

107. O. Moshe, D. H. Rich, B. Damilano, and J. Massies, Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111), J. Phys. D: Appl. Phys. 44, 505101 (2011). pdf, Link

106. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111), Appl. Phys. Lett. 98, 061903 (2011). pdf, Link

105. D. H. Rich, O. Moshe, B. Damilano and J. Massies, Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses, 30th International Conference on the Physics of Semiconductors, AIP Conf. Proc. 1399, 453 (2011). pdf, Link

104. D. H. Rich, Y. Estrin, O. Moshe, S. Bhattacharyya and A. Gedanken, Optical and structural studies of phase-separation in ZnxCd1-xSe/C Core/shell nanocrystals, 30th International Conference on the Physics of Semiconductors, AIP Conf. Proc. 1399, 219 (2011). pdf, Link

103. S. Bhattacharyya, Y. Estrin, D. H. Rich, D. Zitoun, Y. Koltypin, and A. Gedanken, Luminescent and Ferromagnetic CdS:Mn2+ / C Core-shell Nanocrystals, J. Phys. Chem. C 114, 22002 (2010). pdf, Link

102. O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, and J. Massies, Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation, J. Appl. Phys. 108, 083510 (2010). pdf, Link

101. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses, J. Vac. Sci. Technol. B 28 (4), C5E25 (2010). pdf, Link

100. Y. Estrin, D. H. Rich, O. Moshe, S. Bhattacharyya, and A. Gedanken, Phase-separation in ZnxCd1-xSe/C core/shell nanocrystals studied with cathodoluminescence spectroscopy, published in Photovoltaics and Optoelectronics from Nanoparticles, edited by M. Winterer, W. L. Gladfelter, D. R. Gamelin, and S. Oda (Mater. Res. Soc. Symp. Proc. Volume 1260, Warrendale, PA, 2010), Paper No. 1260-T10-03. pdf, Link

99. Y. Estrin, D. H. Rich, O. Moshe, S. Bhattacharyya and A. Gedanken, Carrier relaxation dynamics of ZnxCd1-xSe/C core/shell nanocrystals with phase separation as studied by time-resolved cathodoluminescence, Appl. Phys. Lett. 95, 181903 (2009). pdf, Link

98. S. Bhattacharyya, Y. Estrin, O. Moshe, D. H. Rich, L. A. Solovyov, and A. Gedanken, Highly luminescent ZnxCd1-xSe/C core/shell nanocrystals: Large scale synthesis, structural and cathodoluminescence studies, ACS Nano 3 (7), 1864 (2009). pdf, Link

97. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Perturbing GaN/AlN quantum dots with uniaxial stressors, Proceedings of the 35th International Symposium on Compound Semiconductors (ISCS) in Europa-Park, Rust, Germany, published in Physica Status Solidi (c) Vol. 6, No. 6, pp. 1432-1435, (2009). pdf, Link

96. S. Bhattacharyya, D. Zitoun, Y. Estrin, O. Moshe, D. H. Rich, and A. Gedanken, A one-step, template-free synthesis, characterization, optical and magnetic properties of Zn1-xMnxTe nanosheets, Chem. Mater. 21, 326 (2009). pdf, Link

95. S. Khatsevich and D. H. Rich, The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells, J. Phys.: Condens. Matter 20, 215223 (2008). pdf, Link

94. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111), Phys. Rev. B 77, 155322 (2008). pdf, Link

93. H. P. D. Schenk, S. I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich and D. H. Rich, Band-gap narrowing and radiative efficiency of silicon doped GaN, J. Appl. Phys. 103, 103502 (2008). pdf, Link

92. S. Bhattacharyya, I. Perelshtein, O. Moshe, D. H. Rich, and A. Gedanken, One-step solvent-free synthesis and characterization of Zn1-xMnxSe/C nanorods and nanowires, Adv. Funct. Mater. 18, 1641 (2008). pdf, Link

91.  S. Khatsevich, D. H. Rich, X. Zhang, and P. D. Dapkus, Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms, J. Appl. Phys. 102, 093502 (2007). pdf, Link

90.  S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars, Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells, J. Appl. Phys. 101, 093515 (2007). pdf, Link

89.  G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. Damilano, Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111), Phys. Rev. B 75, 075306 (2007). pdf, Link

88.  S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars, Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InGaN/GaN multiple and single quantum wells, Phys. Rev. B 75, 035324 (2007). pdf, Link

87.  G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, J. Salzman, B. Meyler, M. Shandalov and Y. Golan, Cathodoluminescence Study of Micro-crack-induced Stress Relief for AlN Films on Si(111), J. Electron. Mater. 35 (12), L15 (2006). pdf, Link

86.  S. Khatsevich, D. H. Rich, E.-T. Kim, and A. Madhukar, Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots, J. Appl. Phys. 97, 123520 (2005). pdf, Link

85.  S. Khatsevich, D. H. Rich, X. Zhang, W. Zhou, and P. D. Dapkus, Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence, J. Appl. Phys. 95, 1832 (2004). pdf, Link

84.  M. Gerling, A. Gustafsson, D. H. Rich, D. Ritter, and D. Gershoni, Roughening transition and solid-state diffusion in short period InP/In0.53Ga 0.47As superlattices, Appl. Phys. Lett.78, 1370 (2001). pdf, Link

83.  X. Zhang, P. D. Dapkus, and D. H. Rich, Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation, Appl. Phys. Lett. 77, 1496 (2000). pdf, Link

82. X. Zhang, R. R. Li, P. D. Dapkus, and D. H. Rich, Direct lateral overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique, Appl. Phys. Lett. 77, 2213 (2000). pdf, Link

81. D. H. Rich, C. Zhang, I. Mukhametzhanov, and A. Madhukar, Cathodoluminescence wavelength imaging study of clustering in InAs/GaAs self-assembled quantum dots, Mater. Res. Soc. Proc. Vol. 618, 173 (2000). pdf, Link

80. D. H. Rich, C. Zhang, I. Mukhametzhanov, and A. Madhukar, Cathodoluminescence wavelength imaging of micron-scale energy variations in InAs/GaAs self-assembled quantum dots, Appl. Phys. Lett. 76, 3597 (2000). pdf, Link

79. X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim, J. T. Kobayashi, and N. P. Kobayashi, InGaN/GaN Quantum Wells Growth on Pyramids of Epitaxial Lateral Overgrown GaN, J. of Electron. Mater. 29, No. 1, pp. 10-14 (2000). pdf, Link

78. N. P. Kobayashi, J. T. Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate, Appl. Phys. Lett. 74, 2836 (1999). pdf, Link

77. D. H. Rich, Y. Tang, A. Konkar, P. Chen, and A. Madhukar, Polarized and time-resolved cathodoluminescence study of selectively grown novel self-assembled InAs/GaAs quantum dots, International conference on the physics of semiconductors proc. 24, August, 1998. pdf

76. D. H. Rich, X. Zhang, J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Exciton localization in InGaN/GaN quantum heterostructures studied with time-resolved cathodoluminescence, International conference on the physics of semiconductors proc. 24, August, 1998. pdf

75. J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD, J. Cryst. Growth 195, 252 (1998). pdf

74. D. H. Rich, Y. Tang, A. Konkar, P. Chen, and A. Madhukar, Polarized cathodoluminescence study of selectively grown self-assembled InAs/GaAs quantum dots, J. Appl. Phys. 84, 6337 (1998). pdf

73. X. Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence, Appl. Phys. Lett. 73, 1430 (1998). pdf

72. Y. Tang, D. H. Rich, I. Mukhametzhanov, P. Chen, and A. Madhukar, Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence, J. Appl. Phys. 84, 3342 (1998). pdf

71. X. Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence, Mater. Res. Soc. Proc. 512, 193 (1998). pdf

70. N. P. Kobayashi, J. T. Kobayashi, W. J. Choi, P. D. Dapkus, X. Zhang, and D. H. Rich, Growth of single-crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer, J. Cryst. Growth 189, 172 (1998). pdf

69. Y. Tang, D. H. Rich, A. M. Moy and K. Y. Cheng, An Optical Method for Studying Carrier Diffusion in Strained (InP)2/(GaP)2 Quantum Wires, Appl. Phys. Lett. 72, 55 (1998). pdf

68. X. Zhang, D. H. Rich, C. K. Lin, and P. D. Dapkus, Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique, J. Appl. Phys. 84, 1095 (1998). pdf

67. J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus, X. Zhang, and D. H. Rich, Initial stages of MOCVD growth of GaN using a multi-step growth approach, Mater. Res. Soc. Symp. Proc. 468, 187 (1997). pdf

66. N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X. Zhang, and D. H. Rich, GaN growth on Si(111) substrates using oxidized AlAs as an intermediate layer, Appl. Phys. Lett. 71, 3569 (1997). pdf

65. C. K. Lin, X. Zhang, P. D. Dapkus, and D. H. Rich, Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique, Appl. Phys. Lett. 71, 3108 (1997). pdf

64. Y. Tang, D. H. Rich, A. M. Moy and K. Y. Cheng, Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 Quantum Wires, J. Vac. Sci. Technol. B15, 1034 (1997). pdf

63. O. Sjölund, H. T. Lin, D. H. Rich, M. Ghisoni, A. Larsson, S. Wang, J. Thordsson, and T. G. Andersson, Cathodoluminescence and electron beam induced current study of partially relaxed AlGaAs/GaAs/InGaAs heterojunction phototransistors under operating conditions, J. Appl. Phys. 82, 1438 (1997). pdf

62. D. H. Rich, Y. Tang, and H. T. Lin, Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires, J. Appl. Phys. 81, 6837 (1997). pdf

61. H. T. Lin, D. H. Rich, A. Konkar, P. Chen, and A. Madhukar, Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence, J. Appl. Phys. 81, 3186 (1997). pdf

60. K. Rammohan, D. H. Rich, M. H. MacDougal, and P. D. Dapkus, Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique, Appl. Phys. Lett. 70, 1599 (1997). pdf

59. D. H. Rich, H. T. Lin, A. Konkar, P. Chen, and A. Madhukar, Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes, J. Appl. Phys. 81, 1781 (1997). pdf

58. A. Konkar, H. T. Lin, D. H. Rich, P. Chen, and A. Madhukar, Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(001) substrates, J. Cryst. Growth 175, 741 (1997). pdf

57. D. H. Rich and Y. Tang, Time-resolved cathodoluminescence study of carrier relaxation in strained (InP)2/(GaP)2 quantum wires, Appl. Phys. Lett. 69, 3716 (1996). pdf

56. P. Chen, A. Konkar, H. T. Lin, D. H. Rich, and A. Madhukar, Lattice-matched and mismatched quantum boxes fabricated via size-reducing growth on nonplanar patterned substrates, Int. Conf. Phys. Sem. Proc. 23, July 1996. pdf

55. H. T. Lin, D. H. Rich, O. Sjölund, M. Ghisoni, and A. Larsson, Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in a n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor, Appl. Phys. Lett. 69, 1602 (1996). pdf

54. D. H. Rich, H.T. Lin, A. Konkar, P. Chen, and A. Madhukar, Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AlGaAs layers grown on a patterned GaAs(001) substrate, Appl. Phys. Lett. 69, 665 (1996). pdf

53. D. H. Rich, K. Rammohan, H. T. Lin, Y. Tang, M. Meshkinpour, and M.S. Goorsky, Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga 0.8As/AlxGa1-xAs quantum wells, J. Vac. Sci. Technol. B14, 2922 (1996). pdf

52. Y. Tang, H. T. Lin, D. H. Rich, P. Colter, and S. M. Vernon, Nonlinear optical effects in strained-induced laterally ordered (InP)2/(GaP)2 quantum wires, Phys. Rev. B53, R10501 (1996). pdf

51. H. T. Lin, D. H. Rich, and A. Larsson, Excess carrier lifetime and ambipolar diffusion anisotropy in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well structure, J. Appl. Phys. 79, 7014 (1996). pdf

50. H. T. Lin, D. H. Rich, and A. Larsson, Influence of Structural Defects on Carrier Recombination and Current Gain in an InGaAs/AlGaAs/GaAs Heterojunction Phototransistor, J. Appl. Phys. 79, 8015 (1996). pdf

49. D. H. Rich, H. T. Lin, Y. Tang, K. Rammohan, and A. Larsson, Optical Studies of InGaAs/GaAs MQWs and GaAs/Si Using Novel SEM-Based Techniques, Scanning Microscopy Supplement 9, pp. 131-155 (1995). pdf

48. K. Rammohan, H. T. Lin, D. H. Rich, and A. Larsson, Influence of Misfit Dislocations on Thermal Quenching of Luminescence in InGaAs/GaAs Multiple Quantum Wells, J. Appl. Phys. 78, 6687 (1995). pdf

47. H. T. Lin, D. H. Rich, and A. Larsson, Effects of Strain-induced Defects on Excess Carrier Lifetime and Ambipolar Diffusion in nipi-Doped InGaAs/GaAs MQWs, Mater. Res. Soc. Proc. Vol. 379, 275 (1995). pdf

46. Y. Tang, K. Rammohan, H. T. Lin, D. H. Rich, P. Colter, and S. M. Vernon, Polarized Cathodoluminescence Study of (InP)2/(GaP)2 Bilayer Superlattice Structures, Mater. Res. Soc. Proc. Vol. 379, 165 (1995). pdf

45. K. Rammohan, D. H. Rich, and A. Larsson, Temperature Dependence of Cathodoluminescence from InGaAs/GaAs Multiple Quantum Wells, Mater. Res. Soc. Proc. Vol. 379, 115 (1995). pdf

44. D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, R. S. Goldman, H. H. Wieder, and K. L. Kavanagh, Influence of GaAs(001) Substrate Misorientation Towards {111} on the Optical Properties of InGaAs/GaAs, J. Vac. Sci. Technol. B13, 1766 (1995). pdf

43. A. Konkar, K. C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H. T. Lin, and D. H. Rich, In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates, J. Cryst. Growth 150, 311 (1995). pdf

42. Q. Xie, A. Konkar, A. Kalburge, T. R. Ramachandran, P. Chen, R. Cartland, A. Madhukar, H. T. Lin, and D. H. Rich, Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs(100) substrates by molecular beam epitaxy, J. Vac. Sci. Technol. B13, 642 (1995). pdf

41. D. H. Rich, H. T. Lin, and A. Larsson, Influence of defects on electron-hole plasma recombination and transport in a nipi-doped InGaAs/GaAs multiple quantum well structure, J. Appl. Phys. 77, 6557 (1995). pdf

40. K. Rammohan, Y. Tang, D. H. Rich, R. S. Goldman, H. H. Wieder, and K. L. Kavanagh, Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001), Phys. Rev. B51, 5033 (1995). pdf

39. K. Rammohan, D. H. Rich, R. S. Goldman, J. Chen, H. H. Wieder, and K. L. Kavanagh, Study of micron-scale spatial variations in strain of a compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure, Appl. Phys. Lett. 66, 869 (1995). pdf

38. H. Zhao, K. Uppal, H. Mac Dougal, P. D. Dapkus, H. T. Lin,  and D. H. Rich, Growth and doping properties of AlGaAs/GaAs/InGaAs structures on nonplanar substrates for applications to low threshold lasers, J. Crys. Growth 145, 824 (1994). pdf

37. R.S. Goldman, H. H. Wieder, K. L. Kavanagh, K. Rammohan, and D. H. Rich, Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates, Appl. Phys. Lett. 65, 1424 (1994). pdf

36. M. Meshkinpour, M. S. Goorsky, D. C. Streit, T. Block, M. Wojtowicz, K. Rammohan, and D. H. Rich, The Relationship Between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors, Mater. Res. Soc. Proc. 340, 327 (1994). pdf

35. Y. Tang, D. H. Rich, E. H. Lingunis, and N. M. Haegel, Polarized Cathodoluminescence Study of Stress for GaAs Grown Selectively on Patterned Si(100), J. Appl. Phys. 76, 3032 (1994). pdf

34. K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L. Chen, K. Rammohan, and D. H. Rich, Realization of Three-Dimensionally Confined Structures Via One-Step In Situ MBE On Appropriately Patterned GaAs(111)B and GaAs(001), J. Vac. Sci. Technol. B12, 1071 (1994). pdf

33. R. S. Goldman, K. Rammohan, A. Raisanen, M. Goorsky, L.J. Brillson, D. H. Rich, H. H. Wieder, and K. L. Kavanagh, Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions, Mater. Res. Soc. Symp. Proc. 340, 349 (1994). Link

32. H. T. Lin, D. H. Rich, and D. B. Wittry, Cathodoluminescence Study of Domains, Defects, and Interdiffusion in ZnSe/GaAs(100), J. Appl. Phys. 75, 8080 (1994). pdf

31. D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain, Ambipolar Diffusion Anisotropy Induced by Defects in nipi-doped In0.2Ga0.8As/GaAs Multiple Quantum Wells, Appl. Phys. Lett. 64, 730 (1994). pdf

30. A. Larsson, B. Jonsson, O. Sjolund, J. G. Cody, T.G. Andersson, S. Wang, U. Sodervall, D. H. Rich, J. Maserjian, Carrier Lifetimes in Periodically d-doped MQW Structures, Proc. SPIE 1985, 478 (1993). pdf

29. K. C. Rajkumar, A. Madhukar, K. Rammohan, D. H. Rich, P. Chen, and L. Chen, Optically Active Three-Dimensionally Confined Structures Realized Via Molecular Beam Epitaxical Growth on Non-Planar GaAs(111)B, Appl. Phys. Lett. 63, 2905 (1993). pdf

28. D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, S. I. Borenstain, Absorption Modulation Induced by Electron Beam Excitation of Strained In0.2Ga0.8As/GaAs Multiple Quantum Wells, J. Vac. Sci. Technol. B 11, 1717 (1993). pdf

27. D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain, Electron Beam-Induced Absorption Modulation Imaging of Strained In0.2Ga0.8As/GaAs Multiple Quantum Wells, Appl. Phys. Lett. 63, 394 (1993). pdf

26. K. C. Rajkumar, K. Kaviani, P. Chen, A. Madhukar, K. Rammohan, and D. H. Rich, One-step In-situ Quantum Dots Via Molecular Beam Epitaxy, J. Cryst. Growth 127, 863 (1993). pdf

25. D. H. Rich, A. Ksendzov, R. W. Terhune, F. J. Grunthaner, and B. A. Wilson, Polarized Cathodoluminescence Study of Stress in GaAs/Si, NASA Tech. Brief. 17(4), 53 (1992).

24. Y. H. Shing, F. S. Pool, and D. H. Rich, Low-pressure microwave plasma nucleation and deposition of diamond films, Thin Solid Films 212, 150 (1992). pdf

23. K. C. Rajkumar, K. Kaviani, P. Chen, A. Madhukar, and D. H. Rich, In-situ Growth of Three-dimensionally Confined Structures on Patterned GaAs(111)B Substrates, Mater. Res. Soc. Symp. Proc. 263, 163 (1992). pdf

22. D. H. Rich, T. George, J. Maserjian, F. J. Grunthaner, A. Larsson, Cathodoluminescence and Transmission Electron Microscopy Study of Dark Line Defects in Thick In0.2Ga0.8As/GaAs Multiple Quantum Wells, J. Appl. Phys. 72, 5834 (1992). pdf

21. D. H. Rich, K. C. Rajkumar, L. Chen, A. Madhukar, T. George, J. Maserjian, F. J. Grunthaner, and A. Larsson, Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near-infrared cathodoluminescence study, J. Vac. Sci. Technol. B10, 1965 (1992). pdf

20. D. H. Rich, K. C. Rajkumar, L. Chen, A. Madhukar, and F. J. Grunthaner, Near-infrared Cathodoluminescence Imaging of Defect Distributions in In0.2Ga0.8As/GaAs Multiple Quantum Wells Grown on Prepatterned GaAs, Appl. Phys. Lett. 61, 222 (1992). pdf

19. Y. H. Shing, D. H. Rich, and F. S. Pool, Dependence of the cathodoluminescence of diamond films on deposition temperature, J. Appl. Phys. 71, 6036 (1992). pdf

18. G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T.-C. Chiang, Interface formation and growth of InSb on Si(100), Phys. Rev. B45, 3426 (1992). pdf

17. Y. H. Shing, F. S. Pool and D. H. Rich, Diamond Film Deposition Using Microwave Plasmas Under Low Pressures in Proc. 1st Int. Conf. on the Applications of Diamond Films and Related Materials, Eds. Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman, Auburn, AL, August 1991, Elsevier, Amsterdam, pp. 497-502 (1991).

16. A. Ksendzov, T. George, F. J. Grunthaner, J. K. Liu, D. H. Rich, R. W. Terhune, B. A. Wilson, F. H. Pollak and Y. -S. Huang, Optical and structural characterization of InAs/GaAs quantum wells, Mater. Res. Soc. Symp. Proc. Vol. 221, 459 (1991). Link

15. S. I. Borenstain, I. Grave, A. Larsson, D. H. Rich, B. Jonsson, I. Andersson, J. Westin, and T. Andersson, Long-wavelength infrared spectroscopy of an asymmetrically structured Ga0.6Al0.4As/GaAs superlattice, Phys. Rev. B43, 9320 (1991). pdf

14. A. Ksendzov, F. J. Grunthaner, J. K. Liu, D. H. Rich, R. W. Terhune, and B. A. Wilson, Adsorption and photoluminescence of ultrathin pseudomorphic InAs/GaAs quantum wells, Phys. Rev. B43, 14574 (1991). pdf

13. D. H. Rich, A. Ksendzov, R. W. Terhune, F. J. Grunthaner, B. A. Wilson, H. Shen, M. Dutta, S. M. Vernon, and T. M. Dixon, Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/Si, Phys. Rev. B43, 6836 (1991). pdf

12. G. E. Franklin, D. H. Rich, A. Samsavar, E. S. Hirschorn, F. M. Leibsle, T. Miller, and T.-C. Chiang, Photoemission and scanning-tunneling-microscopy study of GaSb(100), Phys. Rev. B41, 12619 (1990). pdf

11. D. H. Rich, T. Miller, and T.-C. Chiang, Electronic and chemical properties of In and Sb adsorbed on Ge(100) studied by synchrotron photoemission, Phys. Rev. B41, 3004 (1990). pdf

10. D. H. Rich, A. Samsavar, T. Miller, and T.-C. Chiang, Adsorbate-to-Si(100) bonding coordination numbers and structural determinations from synchrotron photoemission studies, Physica Scripta 41, 83 (1990). pdf

9. D. H. Rich, G. E. Franklin, F. M. Leibsle, T. Miller, and T.-C. Chiang, Synchrotron photoemission studies of the Sb-passivated Si surfaces: Degenerate doping and bulk band dispersions, Phys. Rev. B40, 11804 (1989). pdf

8. D. H. Rich, A. Samsavar, T. Miller, F. M. Leibsle, and T.-C. Chiang, Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001), Phys. Rev. B40, 3469 (1989). pdf

7. D. H. Rich, F.M. Leibsle, A. Samsavar, E. S. Hirschorn, T. Miller, and T.-C. Chiang, Adsorption and interaction of Sb on Si(100) studied by scanning tunneling microscopy and core-level photoemission, Phys. Rev. B39, 12758 (1989). pdf

6. D. H. Rich, T. Miller, G. E. Franklin, and T.-C. Chiang, Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies, Phys. Rev. B39, 1438 (1989). pdf

5. D. H. Rich, T. Miller, A. Samsavar, H.F. Lin, and T.-C. Chiang, Adsorption and growth of Sn on Si(100) observed in synchrotron photoemission studies, Phys. Rev. B37, 10221 (1988). pdf

4. D. H. Rich, T. Miller, and T.-C. Chiang, Possibility of charge transfer between dimer atoms on Si(100)-(2x1), Phys. Rev. B37, 3124 (1988). pdf

3. D. H. Rich, T. Miller, and T.-C. Chiang, Absolute determination of surface core level emission for Ge(100)-(2x1) and Ge(111)-c(2x8): surface reconstruction and defects, Phys. Rev. Lett. 60, 357 (1988). pdf

2. D. H. Rich, A. Samsavar, T. Miller, H. F. Lin, T.-C. Chiang, J.-E. Sundgren, and J. E. Greene, Coordination determination of In on Si(100) from synchrotron photoemission studies, Phys. Rev. Lett. 58, 579 (1987). pdf

1. D. H. Rich, A. Samsavar, T. Miller, H. F. Lin, and T.-C. and Chiang, Structural analysis and electronic properties of In on Si(100) from synchrotron photoemission studies, Mater. Res. Soc. Symp. Proc. 94, 219 (1987). Link