Daniel
H. Rich
Associate Professor of Physics
Ben-Gurion University of the Negev
Department of Physics and
The Ilse Katz Institute for Nanoscale
Science and Technology
Biographical
Details:
Rensselaer Polytechnic Institute,
Jet Propulsion Laboratory, Caltech, Pasadena, CA,
Post-doctoral fellow (1989-1991).
Assistant Professor of Materials Science and Engineering, University of
Southern California, Los Angeles, CA (9/91-5/97)
Associate Professor of Materials Science and Engineering, University of
Southern California, Los Angeles, CA. (5/97 - 5/2003)
Adjunct Associate Professor of Materials Science and Engineering, University of
Southern California, Los Angeles, CA. (5/2003 – 5/2005)
Associate Professor of Physics, Department of Physics, Ben-Gurion University,
Beer-Sheva, Israel (10/2000 - Present)
Mailing Address:
Prof. Dan Rich
Department of Physics
Ben-Gurion University of the Negev
P.O.B. 653
Beer-Sheva 84105
ISRAEL
Email: danrich@bgu.ac.il
Phone: +972-8-6461648
Fax: +972-8-6472904
-----------------------------------------------------------------------------------------------------------------------------------------
Teaching Experience at BGU:
Solid-State Physics I in the Fall 2001, Fall 2003, Fall 2004 and Fall
2005; Solid-State Physics II in the Spring 2004, Spring 2005, and Spring
2006; Physics II (Electricity and Magnetism) in the Summer 2003, Fall
2007, Spring 2008, Fall 2009, and Fall 2010; Physics I (Mechanics) in
Spring 2007; Classical and Modern Optics in Spring 2005, Spring 2006,
Spring 2007, Spring 2008, Spring 2009, and Spring 2010; Thermodynamics and
Statistical Mechanics I in Fall 2010; Thermodynamics and Statistical
Mechanics II in Spring 2011; developed and taught a new course in the
Spring of
Research Interests:
Studies of the optical and structural properties of Quantum Nanostructures,
III-V semiconductor thin films, quantum wells, quantum dots, II-VI core/shell nanocrystals, phase separation in semiconductors,
time-resolved optical spectroscopy, cathodoluminescence
(CL) imaging and spectroscopy, scanning electron microscopy, near field
scanning optical microscopy, and atomic force microscopy. The optical
properties of vertically stacked GaN/AlN self-assembled quantum dots (SAQDs), InAs/GaAs SAQDs, and InGaN/GaN quantum wells (QWs) are
currently being studied with time-resolved CL spectroscopy and imaging.
Objectives:
We employ novel spatially, spectrally, and temporally resolved electron beam
probes and near field scanning optical microscopy to study the optical
properties of semiconductor quantum heterostructures
and nanostructures (i.e., quantum wires and quantum dots). Our current
laboratory includes a low temperature cathodoluminescence
(CL) system with time-resolved and polarized detection capability mounted on a
state-of-the-art scanning electron microscope (SEM). Our current and past
research topics include the following studies:
1. The optical properties of MBE- and MOCVD-grown III-V (arsenides, nitrides, and phosphides), II-VI (sulfides, selenides and tellurides) quantum dot nanostructures, laterally patterned thin-films, heterostructures, and multiple quantum well (MQW) systems,
2. The influence of structural morphology and defects on the carrier recombination processes of quantum heterostructures and nanostructures,
3. The phenomena of electron-hole plasmas in modulation nipi-doped MQWs, including nonlinear optical properties and transport dynamics,
4. The effect of local strain variations in heterostructures and nanostructures induced by lattice and thermal mismatch on the optical properties,
5. The carrier relaxation and collection dynamics in III-V, II-VI quantum wires, quantum dots, core/shell nanocrystals, and semiconductor nanostructure alloys exhibiting phase separation and compositional modulation,
6. Analysis of strain relaxation and defect generation in high electron mobility transistors and heterojunction phototransistors,
7. Modeling of the excitation and polarization dependence of QW, QWR and QD optical transitions with various k-dot-p and effective mass calculations of the eigenstates to understand the influence of strain and structure on the optical properties.
The emphasis in this work is on studying simultaneously sub-micron scale spatial and sub-nanosecond scale temporal variations in the optical properties so that an understanding of the interrelationship between the microstructure and the carrier relaxation dynamics can be established.
----------------------------------------------------------------------------------------------------------------------------------------
Publications
(1987-present):
109. Z. Hu, S. Singha, D. H. Rich, and R. J. Gordon, Optical generation of polarized photoluminescence from GaAs(100), Appl. Phys. Lett. 100, 141102 (2012). pdf
108. D. H. Rich, O. Moshe, B. Damilano and J. Massies, Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111), Proceedings of the Spring Meeting of the European Materials Research Society (Symposium F: Group III nitrides and their heterostructures for electronics and photonics) May 2011, published in Physica Status Solidi (c),Vol. 9, No. 3-4, pp. 1011-1015 (2012).
107. O. Moshe, D. H. Rich, B. Damilano, and J. Massies, Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111), J. Phys. D: Appl. Phys. 44, 505101 (2011). pdf
106. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111), Appl. Phys. Lett. 98, 061903 (2011). pdf
105. D. H. Rich, O. Moshe, B. Damilano and J. Massies, Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses, 30th International Conference on the Physics of Semiconductors, AIP Conf. Proc. 1399, 453 (2011).
104. D. H. Rich,
Y. Estrin, O. Moshe, S. Bhattacharyya and A. Gedanken, Optical and structural studies of
phase-separation in ZnxCd1-xSe/C Core/shell nanocrystals, 30th International
Conference on the Physics of Semiconductors, AIP Conf. Proc. 1399, 219
(2011).
103. S. Bhattacharyya, Y. Estrin, D. H. Rich, D. Zitoun, Y. Koltypin, and A. Gedanken, Luminescent and Ferromagnetic CdS:Mn2+ / C Core-shell Nanocrystals, J. Phys. Chem. C 114, 22002 (2010). pdf
102. O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, and J. Massies, Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation, J. Appl. Phys. 108, 083510 (2010). pdf
101. O. Moshe,
D. H. Rich, B. Damilano and J. Massies,
Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial
stresses, J. Vac. Sci. Technol. B 28 (4), C5E25 (2010). pdf
100. Y. Estrin, D. H. Rich, O. Moshe, S. Bhattacharyya, and A. Gedanken, Phase-separation in ZnxCd1-xSe/C core/shell nanocrystals studied with cathodoluminescence spectroscopy, published in Photovoltaics and Optoelectronics from Nanoparticles, edited by M. Winterer, W. L. Gladfelter, D. R. Gamelin, and S. Oda (Mater. Res. Soc. Symp. Proc. Volume 1260, Warrendale, PA, 2010), Paper No. 1260-T10-03. pdf
99. Y. Estrin, D. H. Rich, O. Moshe,
98. S. Bhattacharyya, Y. Estrin, O. Moshe, D. H. Rich, L. A. Solovyov, and A. Gedanken, Highly luminescent ZnxCd1-xSe/C core/shell nanocrystals: Large scale synthesis, structural and cathodoluminescence studies, ACS Nano 3 (7), 1864 (2009). pdf
97. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Perturbing GaN/AlN quantum dots with uniaxial stressors, Proceedings of the 35th International Symposium on Compound Semiconductors (ISCS) in Europa-Park, Rust, Germany, published in Physica Status Solidi (c) Vol. 6, No. 6, pp. 1432-1435, (2009). pdf
96. S. Bhattacharyya, D. Zitoun, Y. Estrin, O. Moshe, D. H. Rich, and A. Gedanken, A one-step, template-free synthesis, characterization, optical and magnetic properties of Zn1-xMnxTe nanosheets, Chem. Mater. 21, 326 (2009). pdf
95. S. Khatsevich and D. H. Rich, The effects of crystallographic orientation and strain on the properties
of excitonic emission from wurtzite
InGaN/GaN quantum
wells, J. Phys.: Condens. Matter 20, 215223 (2008).
pdf
94. O. Moshe, D.
H. Rich, B. Damilano and J. Massies,
Effect of uniaxial stress on the polarization of light emitted
from GaN/AlN
quantum dots grown on Si(111), Phys. Rev. B 77, 155322 (2008). pdf
93. H. P. D. Schenk, S. I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich and D. H. Rich, Band-gap narrowing and radiative efficiency of silicon doped GaN, J. Appl. Phys. 103, 103502 (2008). pdf
92. S. Bhattacharyya, I. Perelshtein, O. Moshe, D. H. Rich, and A. Gedanken, One-step solvent-free synthesis and characterization of Zn1-xMnxSe/C nanorods and nanowires, Adv. Funct. Mater. 18, 1641 (2008). pdf
91. S. Khatsevich, D. H. Rich, X. Zhang, and P. D. Dapkus, Correlating exciton
localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN
planar surfaces and facets of GaN triangular prisms,
J. Appl. Phys. 102, 093502 (2007). pdf
90. S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars, Carrier relaxation dynamics and
steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells, J. Appl.
Phys. 101, 093515 (2007). pdf
89. G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. Damilano, Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111), Phys. Rev. B 75, 075306 (2007). pdf
88. S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars, Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InGaN/GaN multiple and single quantum wells, Phys. Rev. B 75, 035324 (2007). pdf
87. G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, J. Salzman, B. Meyler, M. Shandalov and Y. Golan, Cathodoluminescence Study of Micro-crack-induced Stress Relief for AlN Films on Si(111), J. Electron. Mater. 35 (12), L15 (2006). pdf
86.
S. Khatsevich, D. H. Rich, E.-T. Kim, and A. Madhukar, Cathodoluminescence imaging and
spectroscopy of excited states in InAs
self-assembled quantum dots, J. Appl. Phys. 97, 123520 (2005). pdf
85. S. Khatsevich, D. H. Rich, X. Zhang, W. Zhou, and P. D. Dapkus, Temperature dependence of excitonic
recombination in lateral epitaxially overgrown InGaN/GaN quantum wells
studied with cathodoluminescence, J. Appl.
Phys. 95, 1832 (2004). pdf
84. M. Gerling, A. Gustafsson, D. H.
Rich, D. Ritter, and D. Gershoni, Roughening
transition and solid-state diffusion in short period InP/In0.53Ga
0.47As superlattices, Appl.
Phys. Lett.78, 1370 (2001). pdf
83. X. Zhang, P. D. Dapkus, and D. H. Rich, Lateral epitaxy
overgrowth of GaN with NH3
flow rate modulation, Appl. Phys. Lett. 77, 1496 (2000). pdf
82. X. Zhang, R. R. Li, P.
D. Dapkus, and D. H. Rich, Direct lateral
overgrowth of GaN on sapphire substrates based
on a sparse GaN nucleation technique,
Appl. Phys. Lett. 77, 2213
(2000). pdf
81. D. H. Rich, C. Zhang,
I. Mukhametzhanov, and A. Madhukar,
Cathodoluminescence wavelength
imaging study of clustering in InAs/GaAs self-assembled quantum dots, Mater. Res. Soc. Proc. Vol. 618, 173 (2000). pdf
80. D. H. Rich, C. Zhang,
I. Mukhametzhanov, and A. Madhukar,
Cathodoluminescence wavelength
imaging of micron-scale energy variations in InAs/GaAs self-assembled quantum dots, Appl. Phys. Lett. 76, 3597 (2000). pdf
79. X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim, J. T. Kobayashi, and N. P.
Kobayashi, InGaN/GaN
Quantum Wells Growth on Pyramids of Epitaxial Lateral Overgrown GaN, J. of Electron. Mater. 29, 10 (2000). pdf
78. N. P. Kobayashi, J. T.
Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Epitaxial
lateral overgrowth of GaN over AlOx surface formed on Si substrate,
Appl. Phys. Lett. 74, 2836
(1999). pdf
77. D. H. Rich, Y. Tang, A.
Konkar, P. Chen, and A. Madhukar,
Polarized and time-resolved cathodoluminescence
study of selectively grown novel self-assembled InAs/GaAs quantum dots, International conference on
the physics of semiconductors proc. 24, August, 1998. pdf
76. D. H. Rich, X. Zhang,
J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Exciton localization in InGaN/GaN quantum heterostructures studied with time-resolved cathodoluminescence, International conference on
the physics of semiconductors proc. 24, August, 1998. pdf
75. J. T. Kobayashi, N. P.
Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Structural
and optical emission characteristics of InGaN
thin layers and the implications for growing high-quality quantum wells by
MOCVD, J. Cryst. Growth 195,
252 (1998). pdf
74. D. H. Rich, Y. Tang, A.
Konkar, P. Chen, and A. Madhukar,
Polarized cathodoluminescence study of
selectively grown self-assembled InAs/GaAs quantum dots, J. Appl. Phys. 84,
6337 (1998). pdf
73. X. Zhang, D. H. Rich,
J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Carrier
relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence, Appl. Phys. Lett. 73, 1430 (1998). pdf
72. Y. Tang, D. H. Rich, I.
Mukhametzhanov, P. Chen, and A. Madhukar,
Self-assembled InAs/GaAs
quantum dots studied with excitation dependent cathodoluminescence,
J. Appl. Phys. 84, 3342 (1998). pdf
71. X. Zhang, D. H. Rich, J.
T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus, Carrier
relaxation and recombination in InGaN/GaN quantum heterostructures
probed with time-resolved cathodoluminescence,
Mater. Res. Soc. Proc. 512, 193 (1998). pdf
70. N. P. Kobayashi, J. T.
Kobayashi, W. J. Choi, P. D. Dapkus, X. Zhang, and D.
H. Rich, Growth of single-crystal GaN on
a Si substrate using oxidized AlAs as
an intermediate layer, J. Cryst. Growth 189, 172 (1998). pdf
69. Y. Tang, D.H. Rich,
A.M. Moy and K.Y. Cheng, An Optical Method for Studying Carrier Diffusion
in Strained (InP)2/(GaP)2 Quantum Wires, Appl.
Phys. Lett. 72, 55 (1998).
pdf
68. X. Zhang, D.H. Rich,
C.K. Lin, and P.D. Dapkus, Cathodoluminescence
study of disordering of GaAs/AlGaAs
quantum wells using an AlAs native oxide and
thermal annealing technique, J. Appl. Phys. 84, 1095 (1998). pdf
67. J. T. Kobayashi, N. P.
Kobayashi, P. D. Dapkus, X. Zhang, and D. H. Rich, Initial
stages of MOCVD growth of GaN using a
multi-step growth approach, Mater. Res. Soc. Symp.
Proc. 468, 187 (1997). pdf
66. N.P. Kobayashi, J.T.
Kobayashi, P.D. Dapkus, W.J. Choi, A.E. Bond, X. Zhang,
and D.H. Rich, GaN growth on Si(111) substrates using oxidized AlAs
as an intermediate layer, Appl. Phys. Lett.
71, 3569 (1997). pdf
65. C.K. Lin, X. Zhang,
P.D. Dapkus, and D.H. Rich, Spatially selective
disordering of InGaAs/GaAs
quantum wells using an AlAs native oxide and
thermal annealing technique, Appl. Phys. Lett.
71, 3108 (1997). pdf
64. Y. Tang, D.H. Rich,
A.M. Moy and K.Y. Cheng, Spatial variations in luminescence and carrier
relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 Quantum Wires, J. Vac. Sci.
Technol. B15, 1034 (1997). pdf
63. O. Sjölund,
H.T. Lin, D.H. Rich, M. Ghisoni, A. Larsson, S. Wang,
J. Thordsson, and T. G. Andersson,
Cathodoluminescence and electron
beam induced current study of partially relaxed AlGaAs/GaAs/InGaAs heterojunction phototransistors under operating conditions,
J. Appl. Phys. 82, 1438 (1997). pdf
62. D. H. Rich, Y. Tang,
and H. T. Lin, Linearly polarized and time-resolved cathodoluminescence
study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires, J. Appl.
Phys. 81, 6837 (1997). pdf
61. H. T. Lin, D. H. Rich,
A. Konkar, P. Chen, and A. Madhukar,
Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures
and nanostructures probed with time-resolved cathodoluminescence,
J. Appl. Phys. 81, 3186 (1997). pdf
60. K. Rammohan,
D. H. Rich, M. H. MacDougal, and P. D. Dapkus, Thermal
processing of strained InGaAs/GaAs
quantum well heterostructures bonded to Si via
an epitaxial lift-off technique, Appl. Phys. Lett.
70, 1599 (1997). pdf
59. D. H. Rich, H. T. Lin,
A. Konkar, P. Chen, and A. Madhukar,
Cathodoluminescence study of band
filling and carrier thermalization in GaAs/AlGaAs quantum boxes,
J. Appl. Phys. 81, 1781 (1997). pdf
58. A. Konkar,
H. T. Lin, D. H. Rich, P. Chen, and A. Madhukar, Growth
controlled fabrication and cathodoluminescence study
of 3D confined GaAs volumes on non-planar
patterned GaAs(001) substrates, J. Cryst.
Growth 175, 741 (1997). pdf
57. D. H. Rich and Y. Tang,
Time-resolved cathodoluminescence study of
carrier relaxation in strained (InP)2/(GaP)2
quantum wires, Appl. Phys. Lett. 69, 3716 (1996). pdf
56. P. Chen, A. Konkar, H. T. Lin, D.H. Rich, and A. Madhukar,
Lattice-matched and mismatched quantum boxes fabricated via size-reducing
growth on nonplanar patterned substrates, Int.
Conf. Phys. Sem. Proc. 23, July 1996. pdf
55. H.T. Lin, D.H. Rich, O.
Sjölund, M. Ghisoni, and A.
Larsson, Cathodoluminescence study of
the influence of misfit dislocations on hole accumulation in a
n-AlGaAs/p-GaAs/n-InGaAs heterojunction
phototransistor, Appl. Phys. Lett. 69, 1602 (1996). pdf
54. D.H. Rich, H.T. Lin, A.
Konkar, P. Chen, and A. Madhukar,
Time-resolved cathodoluminescence study of
carrier relaxation in GaAs/AlGaAs
layers grown on a patterned GaAs(001) substrate, Appl. Phys. Lett.
69, 665 (1996). pdf
53. D.H. Rich, K. Rammohan, H.T. Lin, Y. Tang, M. Meshkinpour,
and M.S. Goorsky, Effect of interface defect
formation on carrier diffusion and luminescence in In0.2Ga 0.8As/AlxGa1-xAs
quantum wells, J. Vac. Sci. Technol. B14, 2922 (1996). pdf
52. Y. Tang, H.T. Lin, D.H.
Rich, P. Colter, and S.M. Vernon, Nonlinear
optical effects in strained-induced laterally ordered (InP)2/(GaP)2 quantum wires, Phys. Rev. B53,
R10501 (1996). pdf
51. H.T. Lin, D.H. Rich,
and A. Larsson, Excess carrier lifetime and ambipolar
diffusion anisotropy in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well structure, J.
Appl. Phys. 79, 7014 (1996). pdf
50. H.T. Lin, D.H. Rich,
and A. Larsson, Influence of Structural Defects on Carrier Recombination
and Current Gain in an InGaAs/AlGaAs/GaAs Heterojunction
Phototransistor, J. Appl. Phys. 79, 8015 (1996). pdf
49. D.H. Rich, H.T. Lin, Y. Tang, K. Rammohan, and A. Larsson, Optical Studies of InGaAs/GaAs MQWs and GaAs/Si Using Novel SEM-Based Techniques, Scanning Microscopy
Supplement 9, pp. 131-155 (1995). pdf
48. K. Rammohan, H. T. Lin,
D. H. Rich, and A. Larsson, Influence
of Misfit Dislocations on Thermal Quenching of Luminescence in InGaAs/GaAs Multiple Quantum Wells, J. Appl.
Phys. 78, 6687 (1995). pdf
47. H. T. Lin, D. H. Rich, and A. Larsson, Effects of Strain-induced Defects on Excess
Carrier Lifetime and Ambipolar Diffusion in nipi-Doped InGaAs/GaAs MQWs,
Mat. Res. Soc. Proc. Vol. 379, 275 (1995). pdf
46. Y. Tang, K. Rammohan,
H. T. Lin, D. H. Rich, P. Colter, and S. M. Vernon, Polarized Cathodoluminescence
Study of (InP)2/(GaP)2 Bilayer Superlattice
Structures, Mat. Res. Soc. Proc. Vol. 379, 165
(1995). pdf
45. K. Rammohan, D. H.
Rich, and A. Larsson, Temperature
Dependence of Cathodoluminescence from InGaAs/GaAs Multiple Quantum Wells, Mat. Res. Soc. Proc. Vol. 379, 115 (1995). pdf
44. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, R.S. Goldman, H. H. Wieder, and
K. L. Kavanagh, Influence of GaAs(001) Substrate Misorientation
Towards {111} on the Optical Properties of InGaAs/GaAs,
J. Vac. Sci. Technol. B13, 1766
(1995). pdf
43. A. Konkar, K. C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H. T. Lin, and D. H. Rich, In-situ fabrication of three-dimensionally
confined GaAs and
InAs volumes
via growth on non-planar patterned GaAs(001) substrates,
J. Cryst. Growth 150, 311 (1995). pdf
42. Q. Xie, A. Konkar, A. Kalburge, T. R. Ramachandran, P. Chen, R. Cartland,
A. Madhukar, H. T. Lin, and D. H. Rich, Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs(100) substrates by molecular beam epitaxy,
J. Vac. Sci. Technol. B13, 642
(1995).
41. D. H. Rich, H. T. Lin, and A. Larsson, Influence of defects on electron-hole plasma
recombination and transport in a nipi-doped InGaAs/GaAs multiple quantum well structure, J.
Appl. Phys. 77, 6557 (1995). pdf
40. K. Rammohan, Y.
Tang, D. H. Rich, R. S. Goldman, H. H. Wieder, and K.
L. Kavanagh, Relaxation-induced
polarized luminescence from InxGa1-xAs films grown on GaAs(001), Phys. Rev. B51,
5033 (1995). pdf
39. K. Rammohan, D. H.
Rich, R. S. Goldman, J. Chen, H. H. Wieder, and K. L.
Kavanagh, Study of micron-scale spatial variations in strain of a
compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure,
Appl. Phys. Lett. 66, 869 (1995). pdf
38. H. Zhao, K. Uppal,
H. Mac Dougal, P. D. Dapkus,
H. T. Lin, and
D. H. Rich, Growth and doping
properties of AlGaAs/GaAs/InGaAs
structures on nonplanar substrates for applications
to low threshold lasers, J. Crys. Growth 145, 824 (1994).
37. R.S. Goldman, H. H. Wieder, K. L. Kavanagh, K. Rammohan,
and D. H. Rich, Anisotropic
structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates, Appl. Phys. Lett. 65, 1424 (1994). pdf
36. M. Meshkinpour, M.
S. Goorsky, D. C. Streit,
T. Block, M. Wojtowicz, K. Rammohan,
and D. H. Rich, The Relationship
Between InGaAs Channel Layer Thickness and Device
Performance in High Electron Mobility Transistors, Mat. Res. Soc. Proc. 340, 327 (1994). pdf
35. Y. Tang, D. H. Rich, E. H. Lingunis, and N. M. Haegel, Polarized Cathodoluminescence
Study of Stress for GaAs Grown Selectively on Patterned Si(100), J. Appl. Phys. 76,
3032 (1994). pdf
34. K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L.
Chen, K. Rammohan, and D. H. Rich, Realization of Three-Dimensionally Confined
Structures Via One-Step In Situ MBE On Appropriately Patterned GaAs(111)B and GaAs(001), J. Vac. Sci. Technol. B12, 1071 (1994).
33. R. S. Goldman, K. Rammohan,
A. Raisanen, M. Goorsky,
L.J. Brillson, D. H. Rich, H. H. Wieder,
and K. L. Kavanagh, Anisotropic
Structural and Electronic Properties of InGaAs/GaAs Heterojunctions, Mater. Res. Soc. Symp. Proc. 340, 552 (1994).
32. H. T. Lin, D. H. Rich, and D. B. Wittry, Cathodoluminescence Study of Domains, Defects, and Interdiffusion
in ZnSe/GaAs(100),
J. Appl. Phys. 75, 8080 (1994). pdf
31. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain,
Ambipolar Diffusion Anisotropy Induced by Defects in nipi-doped In0.2Ga0.8As/GaAs Multiple
Quantum Wells, Appl. Phys. Lett. 64, 730 (1994). pdf
30. A. Larsson, B. Jonsson,
O. Sjolund, J.G. Cody, T.G. Andersson,
S. Wang, U. Sodervall, D.H. Rich, J. Maserjian, Carrier
Lifetimes in Periodically d-doped MQW Structures, Proc. SPIE 1985,
478 (1993). pdf
29. K. C. Rajkumar, A. Madhukar, K. Rammohan, D. H.
Rich, P. Chen, and L. Chen, Optically
Active Three-Dimensionally Confined Structures Realized Via Molecular Beam Epitaxical Growth on Non-Planar GaAs(111)B, Appl. Phys. Lett. 63, 2905 (1993). pdf
28. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, S. I. Borenstain,
Absorption Modulation Induced by
Electron Beam Excitation of Strained In0.2Ga0.8As/GaAs Multiple
Quantum Wells, J. Vac. Sci. Technol. B 11, 1717 (1993). pdf
27. D. H. Rich, K. Rammohan,
Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain,
Electron Beam-Induced Absorption
Modulation Imaging of Strained In0.2Ga0.8As/GaAs Multiple
Quantum Wells, Appl. Phys. Lett. 63, 394 (1993). pdf
26. K. C. Rajkumar, K. Kaviani, P. Chen, A. Madhukar, K.
Rammohan, and D. H. Rich, One-step In-situ Quantum Dots Via Molecular Beam Epitaxy,
J. Cryst. Growth 127, 863 (1993).
25. D. H. Rich, A. Ksendzov,
R. W. Terhune, F. J. Grunthaner,
and B. A. Wilson, Polarized Cathodoluminescence Study of Stress in GaAs/Si, NASA Tech. Brief. 17(4), 53 (1992).
24. Y. H. Shing, F. S.
Pool, and D. H. Rich, Low-pressure
microwave plasma nucleation and deposition of diamond films, Thin Solid
Films 212, 150 (1992). pdf
23. K. C. Rajkumar, K. Kaviani, P. Chen, A. Madhukar,
and D. H. Rich, In-situ Growth of
Three-dimensionally Confined Structures on Patterned GaAs(111)B Substrates, Mat. Res. Soc. Symp. Proc. 263, 163 (1992).
pdf
22. D. H. Rich, T. George, J. Maserjian,
F. J. Grunthaner, A. Larsson, Cathodoluminescence and Transmission Electron Microscopy Study of
Dark Line Defects in Thick In0.2Ga0.8As/GaAs Multiple
Quantum Wells, J. Appl. Phys. 72,
5834 (1992). pdf
21. D. H. Rich, K. C. Rajkumar,
L. Chen, A. Madhukar, T. George, J. Maserjian, F. J. Grunthaner, and
A. Larsson, Defects in strained In0.2Ga0.8As/GaAs multiple
quantum wells on patterned and unpatterned
substrates: A near-infrared cathodoluminescence study,
J. Vac. Sci. Technol. B10, 1965
(1992). pdf
20. D. H. Rich, K. C. Rajkumar,
L. Chen, A. Madhukar, and F. J. Grunthaner,
Near-infrared Cathodoluminescence
Imaging of Defect Distributions in In0.2Ga0.8As/GaAs Multiple
Quantum Wells Grown on Prepatterned GaAs, Appl. Phys. Lett. 61, 222 (1992). pdf
19. Y. H. Shing, D. H.
Rich, and F. S. Pool, Dependence of
the cathodoluminescence of diamond films on
deposition temperature, J. Appl. Phys. 71, 6036 (1992). pdf
18. G.
17. Y. H. Shing, F. S. Pool and D. H. Rich, Diamond Film
Deposition Using Microwave Plasmas Under Low Pressures in Proc. 1st
Int. Conf. on the Applications of Diamond Films and Related Materials, Eds. Y. Tzeng, M. Yoshikawa, M. Murakawa,
and A. Feldman, Auburn, AL, August 1991, Elsevier, Amsterdam, pp. 497-502
(1991).
15. S. I. Borenstain,
I. Grave, A. Larsson, D. H. Rich, B. Jonsson, I. Andersson, J. Westin, and T. Andersson,
Long-wavelength infrared spectroscopy
of an asymmetrically structured Ga0.6Al0.4As/GaAs superlattice, Phys. Rev. B43, 9320 (1991). pdf
13. D. H. Rich, A. Ksendzov,
R. W. Terhune, F. J. Grunthaner,
B. A. Wilson, H. Shen, M. Dutta,
S. M. Vernon, and T. M. Dixon, Polarized-cathodoluminescence study of uniaxial and biaxial stress in
GaAs/Si, Phys. Rev. B43, 6836 (1991). pdf
11. D. H. Rich, T. Miller, and T.-C. Chiang, Electronic and chemical properties of In
and Sb adsorbed on Ge(100) studied by synchrotron photoemission, Phys. Rev. B41, 3004 (1990). pdf
10. D. H. Rich, A. Samsavar,
T. Miller, and T.-C. Chiang, Adsorbate-to-Si(100) bonding coordination numbers and structural determinations from
synchrotron photoemission studies, Physica Scripta 41, 83
(1990). pdf
9. D. H. Rich, G. E. Franklin, F. M. Leibsle, T. Miller, and T.-C. Chiang, Synchrotron photoemission studies of the Sb-passivated Si surfaces: Degenerate doping and bulk band
dispersions, Phys. Rev. B40,
11804 (1989). pdf
8. D. H. Rich, A. Samsavar,
T. Miller, F. M. Leibsle, and T.-C. Chiang, Degenerate doping and conduction-band
properties of Si studied by synchrotron photoemission of Sb/Si(001), Phys. Rev. B40, 3469 (1989). pdf
7. D. H. Rich, F.M. Leibsle,
A. Samsavar, E. S. Hirschorn,
T. Miller, and T.-C. Chiang, Adsorption
and interaction of Sb on Si(100) studied by scanning tunneling microscopy and core-level photoemission,
Phys. Rev. B39, 12758 (1989). pdf
6. D. H. Rich, T. Miller, G. E. Franklin, and
T.-C. Chiang, Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission
studies, Phys. Rev. B39,
1438 (1989). pdf
5. D. H. Rich, T. Miller, A. Samsavar,
H.F. Lin, and T.-C. Chiang, Adsorption
and growth of Sn on Si(100) observed in
synchrotron photoemission studies, Phys. Rev. B37, 10221 (1988). pdf
4. D. H. Rich, T. Miller, and T.-C. Chiang, Possibility of charge transfer between
dimer atoms on Si(100)-(2x1),
Phys. Rev. B37, 3124 (1988). pdf
3. D. H. Rich, T. Miller, and T.-C. Chiang, Absolute determination of surface core level
emission for Ge(100)-(2x1) and Ge(111)-c(2x8): surface
reconstruction and defects, Phys. Rev. Lett. 60, 357 (1988). pdf
2. D. H. Rich, A. Samsavar,
T. Miller, H. F. Lin, T.-C. Chiang, J.-E. Sundgren, and J. E. Greene, Coordination determination of In on Si(100) from synchrotron photoemission studies, Phys. Rev. Lett. 58, 579 (1987). pdf
1. D. H. Rich, A. Samsavar,
T. Miller, H. F. Lin, and T.-C. and Chiang, Structural analysis and electronic
properties of In on Si(100) from synchrotron
photoemission studies, Mater. Res. Soc. Symp.
Proc. 94, 219
(1987).